S
Shenghou Liu
Researcher at Hong Kong University of Science and Technology
Publications - 45
Citations - 1430
Shenghou Liu is an academic researcher from Hong Kong University of Science and Technology. The author has contributed to research in topics: Gate dielectric & Breakdown voltage. The author has an hindex of 18, co-authored 45 publications receiving 1200 citations. Previous affiliations of Shenghou Liu include Chinese Academy of Sciences & Peking University.
Papers
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Journal ArticleDOI
Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs
Shenghou Liu,Yong Cai,Gu Guodong,Jinyan Wang,Chunhong Zeng,Wenhua Shi,Zhihong Feng,Hua Qin,Zhiqun Cheng,Kevin J. Chen,Baoshun Zhang +10 more
TL;DR: In this article, an enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) were demon-strated based on lateral scaling of the 2-D electron gas channel using nanochannel array (NCA) structure.
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Al 2 O 3 /AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer
TL;DR: In this article, a monocrystalline AlN interfacial layer is inserted between the amorphous Al�Ω 2�O� 3cffff gate dielectric and the GaN channel to prevent the formation of detrimental Ga-O bonds.
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High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiN x Passivation
TL;DR: An effective passivation technique that yields low off-state leakage and low current collapse simultaneously in highvoltage (600-V) AlGaN/GaN high-electron-mobility transistors (HEMTs) is reported in this article.
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Characterization of Leakage and Reliability of SiN x Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
Mengyuan Hua,Cheng Liu,Shu Yang,Shenghou Liu,Kai Fu,Zhihua Dong,Yong Cai,Baoshun Zhang,Kevin J. Chen +8 more
TL;DR: In this paper, the leakage and breakdown mechanisms of the low-pressure chemical vapor deposition (LPCVD) silicon nitride thin film deposited on AlGaN/GaN heterostructures were systematically investigated.
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Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors
TL;DR: In this paper, a mechanism of the formation of the bulges on the surface of Ti/Al/Ni/Au Ohmic contact in AlGaN/GaN high electron mobility transistors is proposed.