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Baoxing Duan
Researcher at Xidian University
Publications - 72
Citations - 663
Baoxing Duan is an academic researcher from Xidian University. The author has contributed to research in topics: LDMOS & Breakdown voltage. The author has an hindex of 12, co-authored 57 publications receiving 434 citations.
Papers
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Journal ArticleDOI
New Superjunction LDMOS Breaking Silicon Limit by Electric Field Modulation of Buffered Step Doping
TL;DR: In this article, a step doping buffered layer under the super junction LDMOS was proposed to obtain the low loss for the highvoltage region, which improved the breakdown voltage (BV) and average lateral electric field.
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New Superjunction LDMOS With $N$ -Type Charges' Compensation Layer
TL;DR: In this paper, a new superjunction lateral double diffused MOSFET (LDMOST) was designed with an N-type buried layer in the P-substrate near the drain to suppress the effect of substrate-assisted depletion resulting from the imbalance between the pillars of the super junction layer.
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Folded-Accumulation LDMOST: New Power MOS Transistor With Very Low Specific On-Resistance
TL;DR: In this paper, a folded-accumulation LDMOS (FALDMOS) was proposed, in which the silicon-substrate surface is trenched to form a folded shape from the channel to the drain electrode and the gate is extended to drain.
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Low Specific on-Resistance Power MOS Transistor With Multilayer Carrier Accumulation Breaks the Limit Line of Silicon
Baoxing Duan,Yintang Yang +1 more
TL;DR: In this article, a new power metal-oxide-semiconductor field effect transistor (MOSFET) with a FS surface to reduce the specific on-resistance Ron,sp is proposed.
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Complete 3D-Reduced Surface Field Superjunction Lateral Double-Diffused MOSFET Breaking Silicon Limit
TL;DR: In this paper, a new superjunction lateral double-diffused MOS with the semi-insulating poly silicon (SIPOS SJ-LDMOS) has been proposed, for the first time, with the complete three-dimensional reduced surface field (3D-RESURF).