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Benjamin A. Haskell
Researcher at University of California, Santa Barbara
Publications - 79
Citations - 4495
Benjamin A. Haskell is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Epitaxy & Nitride. The author has an hindex of 30, co-authored 79 publications receiving 4396 citations. Previous affiliations of Benjamin A. Haskell include University of California.
Papers
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Journal ArticleDOI
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.
Shigefusa F. Chichibu,Akira Uedono,Akira Uedono,Takeyoshi Onuma,Benjamin A. Haskell,Arpan Chakraborty,T. Koyama,Paul T. Fini,Stacia Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra,Shuji Nakamura,Shigeo Yamaguchi,Shigeo Yamaguchi,Satoshi Kamiyama,Hiroshi Amano,Isamu Akasaki,Jung Han,Takayuki Sota +19 more
TL;DR: Here it is explained why In-containing (Al,In,Ga)N bulk films exhibit a defect-insensitive emission probability, and it is concluded that localizing valence states associated with atomic condensates of In–N preferentially capture holes, which have a positive charge similar to positrons.
Journal ArticleDOI
Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
Benjamin A. Haskell,Feng Wu,Michael D. Craven,S. Matsuda,Paul T. Fini,Tetsuo Fujii,Kenji Fujito,S. P. DenBaars,James S. Speck,Shuji Nakamura +9 more
TL;DR: In this paper, an extended defect density reduction in m-plane GaN films achieved via lateral epitaxial overgrowth (LEO) by hydride vapor phase epitaxy was reported.
Journal ArticleDOI
Demonstration of a semipolar (101¯3¯) InGaN /GaN green light emitting diode
Rajat Sharma,P. M. Pattison,Hisashi Masui,Robert M. Farrell,Troy J. Baker,Benjamin A. Haskell,Feng Wu,S. P. DenBaars,James S. Speck,Shuji Nakamura +9 more
TL;DR: In this article, the authors demonstrate the growth and fabrication of a semipolar (101¯3¯) InGaN∕GaN green (∼525nm) light emitting diode (LED).
Journal ArticleDOI
Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
TL;DR: In this paper, planar semipolar gallium nitride films were grown by hydride vapor phase epitaxy on sapphire, and they were determined to have N-face sense polarity and a threading dislocation density of 9×108 cm-2.
Journal ArticleDOI
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
Arpan Chakraborty,Benjamin A. Haskell,Stacia Keller,James S. Speck,Steven P. DenBaars,Shuji Nakamura,Umesh K. Mishra +6 more
TL;DR: In this paper, the fabrication of nonpolar m-plane InGaN/GaN multiple-quantum well light-emitting diodes (LEDs) on free-standing mplane GaN substrates was reported.