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Bin Lu
Researcher at Massachusetts Institute of Technology
Publications - 44
Citations - 1337
Bin Lu is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Gallium nitride & Breakdown voltage. The author has an hindex of 17, co-authored 40 publications receiving 1189 citations.
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Journal ArticleDOI
Tri-Gate Normally-Off GaN Power MISFET
TL;DR: The tri-gate normally-off GaN on-Si field effect transistor (MISFET) was proposed in this paper, achieving a breakdown voltage of 565 V at a drain leakage current of 0.6 μA/mm and Vgs = 0.80 ± 0.06 V.
Journal ArticleDOI
High Breakdown ( $> \hbox{1500\ V}$ ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
Bin Lu,Tomas Palacios +1 more
TL;DR: In this article, the authors present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates.
Proceedings ArticleDOI
Extraction of Dynamic On-Resistance in GaN Transistors: Under Soft- and Hard-Switching Conditions
TL;DR: In this article, the dynamic on-resistance (Rdson) of commercial GaN transistors in soft-switching and hard switching conditions have been measured and it was found that the off-state drain voltage stress is the main cause for the increase of dynamic Rdson, while the switching losses in the hard switching transient could cause additional trapping and degradation.
Journal ArticleDOI
High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor
TL;DR: In this paper, a dual-gate AlGaN/GaN enhancement-mode (E-mode) transistor based on a dualgate structure is presented, which allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown voltage.
Journal ArticleDOI
A Technology Overview of the PowerChip Development Program
Mohammad Araghchini,Jun Chen,Vicky V. T. Doan-Nguyen,Daniel V. Harburg,Donghyun Jin,Jungkwun Kim,Minsoo Kim,Seungbum Lim,Bin Lu,Daniel Piedra,Jizheng Qiu,John David Ranson,Min Sun,Xuehong Yu,Hongseok Yun,Mark G. Allen,Jesus A. del Alamo,Gary DesGroseilliers,Florian Herrault,Jeffrey H. Lang,Christopher G. Levey,Christopher B. Murray,David M. Otten,Tomas Palacios,David J. Perreault,Charles R. Sullivan +25 more
TL;DR: The PowerChip research program is developing technologies to radically improve the size, integration, and performance of power electronics operating at up to grid-scale voltages and low-to-moderate power levels as discussed by the authors.