Department of Chemistry, Department of Radiology, Washington University in Saint Louis, Saint Louis, Missouri 63130, Department of Chemistry, Texas A&M University, College Station, Texas 77842, Cancer Center Karolinska, Department of Oncology-Pathology CCK, R8:03 Karolinska Hospital and Institute, SE-171 76 Stockholm, Sweden, and Department of Chemistry and Biochemistry, Department of Materials, and Materials Research Laboratory, University of California, Santa Barbara, California 93106

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Applications of Orthogonal “Click” Chemistries in the Synthesis of Functional Soft Materials

We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through defect engineering and oxygen bonding. Micro-PL and Raman images clearly reveal that the PL enhancement occurs at cracks/defects formed during high-temperature annealing. The PL enhancement at crack/defect sites could be as high as thousands of times after considering the laser spot size. The main reasons of such huge PL enhancement include the following: (1) the oxygen chemical adsorption induced heavy p doping and the conversion from trion to exciton; (2) the suppression of nonradiative recombination of excitons at defect sites, which was verified by low-temperature PL measurements. First-principle calculations reveal a strong binding energy of ∼2.395 eV for an oxygen molecule adsorbed on a S vacancy of MoS2. The chemically adsorbed oxygen also provides a much more effective charge transfer (0.997 electrons per O2) compared to physically adsorbed oxygen on an ideal MoS2 surface. We also demonstrate that the defect enginee...

Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding

Over the past decade, advances in LEDs have enabled the potential for wide-scale replacement of traditional lighting with solid-state light sources. If LED performance targets are realized, solid-state lighting will provide significant energy savings, important environmental benefits, and dramatically new ways to utilize and control light. In this paper, we review LED performance targets that are needed to achieve these benefits and highlight some of the remaining technical challenges. We describe recent advances in LED materials and novel device concepts that show promise for realizing the full potential of LED-based white lighting.

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

Blue light-emitting diodes with a light extraction efficiency of 73% are reported. The InGaN–GaN devices use a photonic-crystal structure for superior optical mode control; their performance has been characterized experimentally and modelled theoretically.

III -nitride photonic-crystal light-emitting diodes with high extraction efficiency

Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer (33) formed of a metal between a semiconductor layer (20) and a bonding substrate (31). When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.

Light-emitting device and method of manufacturing the same

Thermal management is one of the main challenges for the future of electronics1–5. With the ever-increasing rate of data generation and communication, as well as the constant push to reduce the size and costs of industrial converter systems, the power density of electronics has risen6. Consequently, cooling, with its enormous energy and water consumption, has an increasingly large environmental impact7,8, and new technologies are needed to extract the heat in a more sustainable way—that is, requiring less water and energy9. Embedding liquid cooling directly inside the chip is a promising approach for more efficient thermal management5,10,11. However, even in state-of-the-art approaches, the electronics and cooling are treated separately, leaving the full energy-saving potential of embedded cooling untapped. Here we show that by co-designing microfluidics and electronics within the same semiconductor substrate we can produce a monolithically integrated manifold microchannel cooling structure with efficiency beyond what is currently available. Our results show that heat fluxes exceeding 1.7 kilowatts per square centimetre can be extracted using only 0.57 watts per square centimetre of pumping power. We observed an unprecedented coefficient of performance (exceeding 10,000) for single-phase water-cooling of heat fluxes exceeding 1 kilowatt per square centimetre, corresponding to a 50-fold increase compared to straight microchannels, as well as a very high average Nusselt number of 16. The proposed cooling technology should enable further miniaturization of electronics, potentially extending Moore’s law and greatly reducing the energy consumption in cooling of electronics. Furthermore, by removing the need for large external heat sinks, this approach should enable the realization of very compact power converters integrated on a single chip. Cooling efficiency is greatly increased by directly embedding liquid cooling into electronic chips, using microfluidics-based heat sinks that are designed in conjunction with the electronics within the same semiconductor substrate.

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Co-designing electronics with microfluidics for more sustainable cooling.

Researchers have designed a light-emitting diode (LED) that produces bright directional polarized blue light. The device, developed at the University of California at Santa Barbara in the USA by Elison Matioli and collaborators, is based on a variant of the semiconductor gallium nitride, grown on a specifically crystal direction that yields emission of polarized light. The researchers improved light extraction from the device by drilling aligned arrays of holes at precisely defined intervals into the substrate. This photonic crystal structure selectively enhances the emission of polarized light for particular emission angles by up to a factor of 1.8. High-brightness LEDs emitting polarized light are of interest for flat-screen displays, and also for household lighting because they minimize the glare from light reflections.

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High-brightness polarized light-emitting diodes

We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field- effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at a drain leakage current of 0.6 μA/mm and Vgs = 0. The new device has an on/off current ratio of more than eight orders of magnitude and a subthreshold slope of 86 ± 9 mV/decade. The threshold voltage of the new device is 0.80 ± 0.06 V with a maximum drain current of 530 mA/mm. These results confirm the great potential of the tri-gate normally-off GaN-on-Si MISFETs for the next generation of power electronics.

Tri-Gate Normally-Off GaN Power MISFET

High internal and external quantum efficiency GaN/InGaN solar cells are demonstrated. The internal quantum efficiency was assessed through the combination of absorption and external quantum efficiency measurements. The measured internal quantum efficiency, as high as 97%, revealed an efficient conversion of absorbed photons into electrons and holes and an efficient transport of these carriers outside the device. Improved light incoupling into the solar cells was achieved by texturing the surface. A peak external quantum efficiency of 72%, a fill factor of 79%, a short-circuit current density of 1.06 mA/cm2, and an open circuit voltage of 1.89 V were achieved under 1 sun air-mass 1.5 global spectrum illumination conditions.

High internal and external quantum efficiency InGaN/GaN solar cells

Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction. The effects of PhCs on light extraction and emission directionality from GaN LEDs are studied experimentally. Angular-resolved electroluminescence clearly shows the combined effect of controlling the vertical mode profile with the IGLs and tailoring the emission profile with the periodicity of the PhC lattice. Increases in directional emission as high as 3.5 times are achieved by taking advantage of this directionality and guided mode control.

https://hal-iogs.archives-ouvertes.fr/hal-00818799/document

Elison Matioli

Papers

Co-designing electronics with microfluidics for more sustainable cooling.

High-brightness polarized light-emitting diodes

Tri-Gate Normally-Off GaN Power MISFET

High internal and external quantum efficiency InGaN/GaN solar cells

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes