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Blanca Susana Soto-Cruz

Researcher at Benemérita Universidad Autónoma de Puebla

Publications -  14
Citations -  126

Blanca Susana Soto-Cruz is an academic researcher from Benemérita Universidad Autónoma de Puebla. The author has contributed to research in topics: Transistor & Silicon. The author has an hindex of 6, co-authored 13 publications receiving 115 citations.

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Journal Article

Electromechanical analysis of a piezoresistive pressure microsensor for low-pressure biomedical applications

TL;DR: In this paper, an electromechanical analysis of a piezoresistive pressure microsensor with a square-shaped diaphragm for low-pressure biomedical applications is presented.
Journal ArticleDOI

Influence of P3HT:PCBM blend preparation on the active layer morphology and cell degradation

TL;DR: This work analyzes the behavior of solar cells based on poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester, P3HT:PCBM blends prepared under different conditions to understand the mechanisms involved in the device behavior and during its degradation in ambient conditions.
Journal ArticleDOI

Modeling the behavior of amorphous oxide thin film transistors before and after bias stress

TL;DR: A procedure for modeling the characteristics of amorphous oxide semiconductor TFTs, including the hump observed in the transfer characteristics after DC stress, is presented, based on the Universal Method and Extraction Procedure, UMEM.
Proceedings ArticleDOI

SOI FinFET compact model for RF circuits simulation

TL;DR: A methodology to properly establish an accurate SOI FinFET compact model through SPICE simulator is presented and the comparison between the simulated and measured performance of a Low Noise Amplifier demonstrates the validity and the capabilities of this compact model to simulate the dc and RF behavior of RF circuits.
Journal ArticleDOI

A compact model for Single Event Effects in PD SOI sub-micron MOSFETs

TL;DR: In this paper, a compact model implemented in Verilog-A for partially depleted (PD) silicon-on-insulator (SOI) sub-micron MOSFETs, which allows for describing the Single Events Effects (SEE) produced by heavy ions.