V
Valeriya Kilchytska
Researcher at Université catholique de Louvain
Publications - 137
Citations - 1827
Valeriya Kilchytska is an academic researcher from Université catholique de Louvain. The author has contributed to research in topics: MOSFET & Silicon on insulator. The author has an hindex of 23, co-authored 128 publications receiving 1639 citations. Previous affiliations of Valeriya Kilchytska include Katholieke Universiteit Leuven & National Academy of Sciences of Ukraine.
Papers
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Journal ArticleDOI
Influence of device engineering on the analog and RF performances of SOI MOSFETs
Valeriya Kilchytska,Amaury Nève,Laurent Vancaillie,David Levacq,Stéphane Adriaensen,H. van Meer,K. De Meyer,C. Raynaud,Morin Dehan,Jean-Pierre Raskin,Denis Flandre +10 more
TL;DR: In this paper, the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m.
Journal ArticleDOI
Analog/RF performance of multiple gate SOI devices: wideband simulations and characterization
TL;DR: In this paper, a wideband experimental and three-dimensional simulation analyses have been carried out to compare the analog/RF performance of planar double-gate (DG), triple-gate, Fin-FET, Pi-Gate (PG), and single-gate SOI MOSFETs.
Journal ArticleDOI
FinFET analogue characterization from DC to 110 GHz
Dimitri Lederer,Valeriya Kilchytska,Tamara Rudenko,Nadine Collaert,Denis Flandre,Abhisek Dixit,Abhisek Dixit,K. De Meyer,K. De Meyer,Jean-Pierre Raskin +9 more
TL;DR: In this article, the analogue performance of 50 nm gate length FinFETs is investigated under static and dynamic conditions up to 110 GHz, and it is shown that a non-uniform silicidation of the three-dimensional polysilicon gate can have a strong impact on the device maximum frequency of oscillation (f(max)).
Journal ArticleDOI
A 3-D Analytical Physically Based Model for the Subthreshold Swing in Undoped Trigate FinFETs
TL;DR: An analytical physically based analysis for undoped FinFET devices in the subthreshold and near-threshold regimes has been developed by solving the 3-D Poisson equation, in which the mobile-charge term was included as mentioned in this paper.
Proceedings ArticleDOI
Perspective of FinFETs for analog applications
Valeriya Kilchytska,Nadine Collaert,Rita Rooyackers,Dimitri Lederer,Jean-Pierre Raskin,Denis Flandre +5 more
TL;DR: The first detailed experimental investigation of the analog performance of FinFETs with channel lengths down to 50 nm shows that such devices have very strong potential for analog applications, mainly thanks to a super-high value of the Early voltage and hence intrinsic gain, which they can provide.