scispace - formally typeset
B

Byoung Hun Lee

Researcher at Gwangju Institute of Science and Technology

Publications -  6
Citations -  227

Byoung Hun Lee is an academic researcher from Gwangju Institute of Science and Technology. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 6, co-authored 6 publications receiving 215 citations.

Papers
More filters
Journal ArticleDOI

Flexible organic solar cells composed of P3HT: PCBM using chemically doped graphene electrodes

TL;DR: The sheet resistance of the chemicallydoped graphene film was reduced to half of its original value, resulting in a significant performance enhancement of OSCs featuring doped graphene electrodes.
Journal ArticleDOI

Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices

TL;DR: In this paper, a decoration of Au nanoparticles (NPs) on multi-layer graphene films improved the electrical conductivity and modified the work function of the graphene films, and the Au NP-decorated graphene film enhanced the current injection and electroluminescence of GaN-based LEDs through low contact resistance.
Journal ArticleDOI

A study of the leakage current in TiN/HfO2/TiN capacitors

TL;DR: In this paper, the physical and electrical properties of metal-insulator-metal TiN/HfO"2/TiN capacitors have been investigated using internal photoemission and trap assisted transport simulation.
Journal ArticleDOI

Issues with the electrical characterization of graphene devices

TL;DR: In this article, the authors address major obstacles in the electrical characterization of graphene devices and offer countermeasures to improve the accuracy of electrical characterization methods, such as current-volt-age curves, despite the common practice of using well known electrical char- acterization methods that have been used in silicon MOSFET.
Journal ArticleDOI

New Insight Into PBTI Evaluation Method for nMOSFETs With Stacked High- $k$ /IL Gate Dielectric

TL;DR: In this article, a strategy to minimize the error in lifetime projections using a positive bias temperature instability (PBTI) test has been proposed, and two distinctly different projection slopes were observed in a plot of time to failure versus oxide electric field.