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Byoung Hun Lee
Researcher at Gwangju Institute of Science and Technology
Publications - Â 6
Citations - Â 227
Byoung Hun Lee is an academic researcher from Gwangju Institute of Science and Technology. The author has contributed to research in topics: Graphene & Graphene nanoribbons. The author has an hindex of 6, co-authored 6 publications receiving 215 citations.
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Journal ArticleDOI
Flexible organic solar cells composed of P3HT: PCBM using chemically doped graphene electrodes
Sangchul Lee,Jun-Seok Yeo,Yongsung Ji,Chunhum Cho,Dong-Yu Kim,Seok-In Na,Byoung Hun Lee,Takhee Lee +7 more
TL;DR: The sheet resistance of the chemicallydoped graphene film was reduced to half of its original value, resulting in a significant performance enhancement of OSCs featuring doped graphene electrodes.
Journal ArticleDOI
Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices
Minhyeok Choe,Chu-Young Cho,Jae-Phil Shim,Woojin Park,Sung Kwan Lim,Woong-Ki Hong,Byoung Hun Lee,Dong-Seon Lee,Seong-Ju Park,Takhee Lee +9 more
TL;DR: In this paper, a decoration of Au nanoparticles (NPs) on multi-layer graphene films improved the electrical conductivity and modified the work function of the graphene films, and the Au NP-decorated graphene film enhanced the current injection and electroluminescence of GaN-based LEDs through low contact resistance.
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A study of the leakage current in TiN/HfO2/TiN capacitors
S. Cimino,Andrea Padovani,Luca Larcher,Valery V. Afanas'ev,Hyunsang Hwang,Young Gon Lee,M. Jurczac,Dirk Wouters,Byoung Hun Lee,Hyunsang Hwang,L. Pantisano +10 more
TL;DR: In this paper, the physical and electrical properties of metal-insulator-metal TiN/HfO"2/TiN capacitors have been investigated using internal photoemission and trap assisted transport simulation.
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Issues with the electrical characterization of graphene devices
Byoung Hun Lee,Young Gon Lee,Ukjin Jung,Yonghun Kim,Hyeon Jun Hwang,Jin Ju Kim,Chang-Goo Kang +6 more
TL;DR: In this article, the authors address major obstacles in the electrical characterization of graphene devices and offer countermeasures to improve the accuracy of electrical characterization methods, such as current-volt-age curves, despite the common practice of using well known electrical char- acterization methods that have been used in silicon MOSFET.
Journal ArticleDOI
New Insight Into PBTI Evaluation Method for nMOSFETs With Stacked High- $k$ /IL Gate Dielectric
Sang Kyung Lee,Minseok Jo,Chang-Woo Sohn,Chang Yong Kang,J.C. Lee,Yoon-Ha Jeong,Byoung Hun Lee +6 more
TL;DR: In this article, a strategy to minimize the error in lifetime projections using a positive bias temperature instability (PBTI) test has been proposed, and two distinctly different projection slopes were observed in a plot of time to failure versus oxide electric field.