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TL;DR: In this paper, a high contrast (> 100:1) low-voltage multiple quantum well reflection modulator was demonstrated. But the performance was not as good as that achieved by using resonantly enhanced electroabsorption in GaAs quantum wells embedded in the spacer region of an asymmetric Fabry-Perot cavity.

TL;DR: In this article, the forward bias behavior of AlGaAs/GaAs p−i−n multiquantum well (MQW) photodiodes was studied and the results showed that with low background impurity levels in the intrinsic region the high quantum efficiency observed in reverse bias was maintained into forward bias even for carriers photoexcited in the wells.

TL;DR: In this article, the authors report a technique for quantum well intermixing which is simple, reliable and low cost, and appears universally applicable to a wide range of material systems, and involves the deposition of a thin layer of sputtered SiO2 and a subsequent high temperature anneal.

TL;DR: In this paper, a photoabsorption-induced disordering (PAID) was used to tune the bandgap of InGaAs-InGaAsP multiple-quantum-well (MQW) material using a Nd:YAG laser.

TL;DR: In this article, the authors report measurements of the dark-current and open-circuit voltage of a number of quantum well cells in three different lattice matched material systems, namely, Al0.35Ga0.65As/GaAs, GaInP/GaA, and InP/InGaAs.