N
Nina Dyakonova
Researcher at University of Montpellier
Publications - 114
Citations - 2430
Nina Dyakonova is an academic researcher from University of Montpellier. The author has contributed to research in topics: Terahertz radiation & Field-effect transistor. The author has an hindex of 24, co-authored 110 publications receiving 2301 citations.
Papers
More filters
Journal ArticleDOI
Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Wojciech Knap,Michel Dyakonov,D. Coquillat,Frederic Teppe,Nina Dyakonova,Jerzy Łusakowski,Krzysztof Karpierz,Maciej Sakowicz,Gintaras Valušis,Dalius Seliuta,Irmantas Kašalynas,A. El Fatimy,Yahya Moubarak Meziani,Taiichi Otsuji +13 more
TL;DR: In this paper, the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging are presented, where resonant and gate voltage tunable detection related to plasma waves resonances, is observed.
Journal ArticleDOI
Resonant and voltage-tunable terahertz detection in InGaAs /InP nanometer transistors
A. El Fatimy,Frederic Teppe,Nina Dyakonova,Wojciech Knap,Dalius Seliuta,Gintaras Valušis,Andrey Shchepetov,Yannick Roelens,Sylvain Bollaert,Alain Cappy,Sergey Rumyantsev +10 more
TL;DR: In this article, high electron mobility nanometer InGaAs∕AlInAs transistors were used to detect terahertz radiation at 1.8-3.1THz frequency range.
Journal ArticleDOI
Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistor
J. Lusakowski,Wojciech Knap,Nina Dyakonova,Luca Varani,Javier Mateos,Tomas Gonzalez,Y. Roelens,Sylvain Bollaert,Alain Cappy,Krzysztof Karpierz +9 more
TL;DR: In this paper, a threshold-like emission from InGaAs∕InAlAs lattice-matched high electron mobility transistors was observed in a thresholdlike manner when the applied drain-to-source voltage UDS is larger than a threshold value UTH.
Journal ArticleDOI
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
A. El Fatimy,Nina Dyakonova,Yahya Moubarak Meziani,Taiichi Otsuji,Wojciech Knap,S. Vandenbrouk,K. Madjour,Didier Theron,Christophe Gaquiere,M.A. Poisson,S. Delage,Pawel Prystawko,Czeslaw Skierbiszewski +12 more
TL;DR: In this article, a room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors was reported, where the emission peak was found to be tunable by the gate voltage between 0.75 and 2.1 THz.
Journal ArticleDOI
Room-temperature terahertz emission from nanometer field-effect transistors
Nina Dyakonova,A. El Fatimy,Jerzy Łusakowski,Wojciech Knap,Michel Dyakonov,M.A. Poisson,Erwan Morvan,Sylvain Bollaert,Andrey Shchepetov,Yannick Roelens,Christophe Gaquiere,Didier Theron,Alain Cappy +12 more
TL;DR: In this paper, the room-temperature generation of terahertz radiation in nanometer gate length InAlAs∕InGaAs and AlGaN∕GaN high-mobility transistors is reported.