Chia-Yuan Chang

TL;DR: In this article, it was shown that phonons can be coherently transferred between two nanomechanical resonators, and the technique of controlling the coupling between nanoscale oscillators using a piezoelectric transducer is useful for manipulating classical oscillations, but if extended to the quantum regime it could also enable entanglement of macroscopic mechanical objects.

TL;DR: In this article, an 80-nm InP high electron mobility transistor (HEMT) with InAs channel and InGaAs subchannels has been fabricated, and DC and RF characterizations on the device have been performed to determine the proper bias conditions in avoidance of performance degradations due to the impact ionization.

TL;DR: In this article, an 80-nanometer-gate In0.7Ga0.3As composite-channel high-electron mobility transistors (HEMTs), which are fabricated using platinum buried gate as the Schottky contact metal, were evaluated for RF and logic application.

TL;DR: In this paper, the reduction of native oxides on an InAs surface using various wet and dry chemical treatments, including HCl treatment, sulfide treatment, and in situ trimethyl aluminum (TMA) treatment before the atomic layer deposition (ALD) of Al2O3 on InAs is studied.

TL;DR: In this paper, the InAs/In0.7Ga0.3As composite channel HEMTs with different lattice matched sub-channels, In0.53Ga 0.47As and In 0.7 Ga0.5As, have been fabricated.