C
Chong Xing
Researcher at University of Science and Technology of China
Publications - 14
Citations - 246
Chong Xing is an academic researcher from University of Science and Technology of China. The author has contributed to research in topics: Light-emitting diode & Quantum efficiency. The author has an hindex of 4, co-authored 11 publications receiving 92 citations.
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Journal ArticleDOI
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
Zhongjie Ren,Zhongjie Ren,Huabin Yu,Zhongling Liu,Danhao Wang,Chong Xing,Haochen Zhang,Chen Huang,Shibing Long,Haiding Sun +9 more
TL;DR: In this article, the authors summarize the recent progress on various energy band designs and engineering of DUV LEDs, with particular of interest paid on the various approaches in band engineering of the electron blocking layer, quantum well, quantum barrier and the implementation of many novel structures such as tunnel junctions, ultrathin quantum heterostructures to enhance their efficiency.
Journal ArticleDOI
Compositionally Graded III-Nitride Alloys: Building Blocks for Efficient Ultraviolet Optoelectronics and Power Electronics.
Haochen Zhang,Chen Huang,Kang Song,Huabin Yu,Chong Xing,Danhao Wang,Zhongling Liu,Haiding Sun +7 more
TL;DR: In this paper, the authors focus on the unique physical properties of graded aluminum gallium nitride (AlGaN) alloys and highlight the key roles that such graded structures play in device exploration.
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Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W
Haochen Zhang,Fangzhou Liang,Kang Song,Chong Xing,Danhao Wang,Huabin Yu,Chen Huang,Yue Sun,Lei Yang,Xiaolong Zhao,Haiding Sun,Shibing Long +11 more
TL;DR: In this article, a high-performance ultraviolet phototransistor (UVPT) based on the AlGaN/GaN high-electron mobility transistor (HEMT) configuration was demonstrated.
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Performance Improvement of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Step-Like Quantum Barriers
TL;DR: In this article, a step-like quantum barrier (QB) structure was proposed to improve the hole injection efficiency of DUV LEDs, and the internal quantum efficiency (IQE) and light output power (LOP) were significantly improved with an enhancement factor of 40% under 60 mA current injection.
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Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum Barriers
TL;DR: In this article, an AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) structure with the incorporation of inverted-V-shaped quantum barriers (QBs) was demonstrated.