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Christopher J. Kiely
Researcher at Lehigh University
Publications - 389
Citations - 33224
Christopher J. Kiely is an academic researcher from Lehigh University. The author has contributed to research in topics: Catalysis & Nanoparticle. The author has an hindex of 84, co-authored 374 publications receiving 29156 citations. Previous affiliations of Christopher J. Kiely include Rice University & University of Liverpool.
Papers
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Mechanisms of visible photoluminescence from nanoscale silicon cones
TL;DR: In this article, the origin of visible photoluminescence in nanoscale silicon cones fabricated by reactive ion etching in silicon-on-insulator substrates utilizing rough silver films as masks was explored.
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The effect of temperature on the chemistry and morphology of the interphase in an SCS6/Ti-6Al-4V metal matrix composite
TL;DR: The changes in chemistry and morphology within the interphase region of an SCS6-Ti-6Al-4V metal matrix composite upon exposing the samples to varying heat treatments have been studied using Auger electron spectroscopy, TEM and convergent beam diffraction techniques.
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Low-temperature aerobic oxidation of decane using an oxygen-free radical initiator
Rhys Lloyd,Robert Leyshon Jenkins,Marco Piccinini,Qian He,Christopher J. Kiely,Albert Frederick Carley,Stanislaw E. Golunski,Donald Bethell,Jonathan K. Bartley,Graham J. Hutchings +9 more
TL;DR: In this article, it was shown that it is possible to oxidise n-decane in the presence of the oxygen-free radical initiator azobisisobutyronitrile.
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A structural study of haematite samples prepared from sulfated goethite precursors: the generation of axial mesoporous voids
Adam S. J. Baker,Adrian S. C. Brown,Martin A. Edwards,Justin S. J. Hargreaves,Christopher J. Kiely,Adrian Meagher,Quentin A. Pankhurst +6 more
TL;DR: In this paper, a study of the reflection width anisotropy evident in powder X-ray diffraction patterns of haematite prepared from sulfated goethite precursors calcined at low temperatures has been made.
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Epitaxial growth of Ge films on GaAs (285–415 °C) by laser photochemical vapor deposition
TL;DR: In this paper, an epitaxial GaAs film was grown on GaAs by laser photochemical vapor deposition (LPVD) for substrate temperatures (Ts) in the 285≤Ts≤415 °C interval by photodissociating GeH4 with an ArF (193 nm) laser.