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Christopher J. Kiely

Researcher at Lehigh University

Publications -  389
Citations -  33224

Christopher J. Kiely is an academic researcher from Lehigh University. The author has contributed to research in topics: Catalysis & Nanoparticle. The author has an hindex of 84, co-authored 374 publications receiving 29156 citations. Previous affiliations of Christopher J. Kiely include Rice University & University of Liverpool.

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Assessing and controlling the size, morphology and composition of supported bimetallic catalyst nanoparticles

TL;DR: In this paper, a combination of HAADF imaging and XEDS compositional analysis in the STEM has given considerable insight into the way in which elemental distributions evolve in these bimetallic catalyst systems during processing and use.
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Diffraction studies of metal-semiconductor interfaces

TL;DR: The use of convergent beam electron diffraction patterns (CBPs) for investigating metal-semiconductor interfaces in plan-view samples is considered in this article, where it is shown that a wide-angle diffraction technique provides a sensitive method of measuring tetragonal distortions in NiSi2/(001)Si bicrystals.
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Catalysis Using Colloidal‐Supported Gold‐Based Nanoparticles

TL;DR: In this paper, the authors describe and discuss the utilisation of gold-based nanoparticles as efficient catalysts for a range of important reactions, with particular emphasis placed on their recent research.
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Epitaxial Semiconductor Films Grown By Laser Photochemical Vapor Deposition

TL;DR: In this article, the growth of epitaxial semiconductor films on GaAs by laser photochemical vapor deposition (LPVD) has been described, and the results provide a clear example of the ability of LPVD to grow epitaxially films under conditions in which growth is not attrib ­ utable to substrate heating or adlayer photolysis but rather to species generated photo- chemically and in the gas phase.
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A TEM Study of the Structure of Polycrystalline Si Films on (111) Si Substrates Grown by Low Pressure Chemical Vapor Deposition

TL;DR: In this article, a series of films have been deposited on Si wafers by the pyrolytic decomposition of disilane in a low pressure CVD reactor at temperatures below 765°C, at a variety of Si2H6 partial pressures.