The field of viscous liquid and glassy solid dynamics is reviewed by a process of posing the key questions that need to be answered, and then providing the best answers available to the authors and their advisors at this time. The subject is divided into four parts, three of them dealing with behavior in different domains of temperature with respect to the glass transition temperature, Tg , and a fourth dealing with ‘‘short time processes.’’ The first part tackles the high temperature regime T.Tg ,i n which the system is ergodic and the evolution of the viscous liquid toward the condition at Tg is in focus. The second part deals with the regime T;Tg , where the system is nonergodic except for very long annealing times, hence has time-dependent properties ~aging and annealing!. The third part discusses behavior when the system is completely frozen with respect to the primary relaxation process but in which secondary processes, particularly those responsible for ‘‘superionic’’ conductivity, and dopart mobility in amorphous silicon, remain active. In the fourth part we focus on the behavior of the system at the crossover between the low frequency vibrational components of the molecular motion and its high frequency relaxational components, paying particular attention to very recent developments in the short time dielectric response and the high Q mechanical response. © 2000 American Institute of Physics.@S0021-8979~00!02213-1#

https://lib.dr.iastate.edu/cgi/viewcontent.cgi?article=1065&context=mse_pubs

Relaxation in glassforming liquids and amorphous solids

Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis is placed on the examination of how these models agree with general physical principles. New concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.

Recent advances in Schottky barrier concepts

Semiconducting quantum dots, whose particle sizes are in the nanometer range, have very unusual properties. The quantum dots have band gaps that depend in a complicated fashion upon a number of factors, described in the article. Processing-structure-properties-performance relationships are reviewed for compound semiconducting quantum dots. Various methods for synthesizing these quantum dots are discussed, as well as their resulting properties. Quantum states and confinement of their excitons may shift their optical absorption and emission energies. Such effects are important for tuning their luminescence stimulated by photons (photoluminescence) or electric field (electroluminescence). In this article, decoupling of quantum effects on excitation and emission are described, along with the use of quantum dots as sensitizers in phosphors. In addition, we reviewed the multimodal applications of quantum dots, including in electroluminescence device, solar cell and biological imaging.

https://www.mdpi.com/1996-1944/3/4/2260/pdf

Quantum Dots and Their Multimodal Applications: A Review

The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface. Existing models of the SBH are too simple to realistically treat the chemistry exhibited at MS interfaces. This article points out, through examination of available experimental and theoretical results, that a comprehensive, quantum-mechanics-based picture of SBH formation can already be constructed, although no simple equations can emerge, which are applicable for all MS interfaces. Important concepts and principles in physics and chemistry that govern the formation of the SBH are described in detail, from which the experimental and theoretical results for individual MS interfaces can be understood. Strategies used and results obtained from recent investigations to systematically modify the SBH are also examined from the perspective of the physical and chemical principles of the MS interface.

The physics and chemistry of the Schottky barrier height

A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the t...

Ion and electron irradiation-induced effects in nanostructured materials

Thick amorphous Si layers have been prepared by MeV self-ion-implantation and the thermodynamic and structural properties examined by calorimetry, Raman-spectroscopy, and x-ray-diffraction techniques. Defects have been introduced into well-annealed amorphous and single-crystal Si by He, C, Si, and Ge bombardment. The defect structures are examined by these techniques and by transmission electron microscopy. The structure of amorphous Si in intermediate states of relaxation or annealing have been determined. It is shown that amorphous Si formed by either implantation or deposition contains a large population of point defects and point-defect clusters. Amorphous Si formed by laser quenching cannot be distinguished from well-annealed amorphous Si. Structural relaxation, also known as short-range ordering, can be understood as annihilation of a large fraction of these defects. Both structural relaxation in amorphous Si and defect annihilation in crystalline Si obey bimolecular reaction kinetics. The defect-formation and -annihilation processes are similar in amorphous and crystalline Si. Defect saturation occurs in amorphous Si at estimated defect concentrations of about 1 at. %. These formation and annihilation properties are intrinsic to pure amorphous Si. For hydrogenated amorphous Si, it is pointed out that the metastable-defect-creation and -annealing processes are essentially different from the annihilation processes in pure amorphous Si.

Structural relaxation and defect annihilation in pure amorphous silicon

General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The ...

Ion beams in silicon processing and characterization

Limiting thickness hepi for epitaxial growth and room-temperature Si growth on Si(100).

Surface energy anisotropy, as opposed to surface energy, is shown to influence change of growth mode in Ge/Si by ``surfactant'' impurities. By annealing thin Ge/Si films, we find the equilibrium island shape, and hence the surface energy anisotropy; radical changes in shape are seen for impurity-terminated surfaces: Ge:Sb enhances (100) facets compared to clean Ge and Ge:In favors {311}. Thus Sb impurities favor large flat islands which would lead to earlier island coalescence and can aid planar (100) growth, while In (though otherwise a good ``surfactant'') leaves the film faceted. Island suppression by a ``morphactant'' thus depends on enhanced faceting onto (100), as well as reduced diffusion.

Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formation

The low‐temperature limit to GaAs molecular beam epitaxy (MBE) is studied at temperatures from 250 °C to room temperature. Using transmission electron microscopy of layers grown under a variety of conditions we show that, as for Si MBE, there is an epitaxial thickness hepi at which a growing epitaxial layer becomes amorphous. The temperature, growth rate, composition, and defect density all appear to be constant during growth of the epitaxial layer, and (in analogy with Si MBE) we tentatively associate the breakdown of epitaxy at hepi with roughening of the growth surface. We demonstrate that hepi depends strongly on composition, increasing rapidly with Ga/As ratio at fixed temperature. At fixed Ga/As ratio, hepi shows an abrupt increase from <200 to ≳5000 A at 210 °C. The results have implications for the growth of GaAs/GaAs for high‐speed photodetectors, as well as possible applications to GaAs/Si heteroepitaxy.

D. J. Eaglesham

Papers

Structural relaxation and defect annihilation in pure amorphous silicon

Ion beams in silicon processing and characterization

Limiting thickness hepi for epitaxial growth and room-temperature Si growth on Si(100).

Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formation

Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °C