D
David Esseni
Researcher at University of Udine
Publications - 296
Citations - 6533
David Esseni is an academic researcher from University of Udine. The author has contributed to research in topics: MOSFET & Electron mobility. The author has an hindex of 41, co-authored 278 publications receiving 5888 citations. Previous affiliations of David Esseni include University of Bologna & Bell Labs.
Papers
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Journal ArticleDOI
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes
Anderson D. Smith,Frank Niklaus,Alan Paussa,Sam Vaziri,Andreas Fischer,Mikael Sterner,Fredrik Forsberg,Anna Delin,David Esseni,Pierpaolo Palestri,Mikael Östling,Max C. Lemme,Max C. Lemme +12 more
TL;DR: This work conclusively demonstrate the piezoresistive effect in graphene in a nanoelectromechanical membrane configuration that provides direct electrical readout of pressure to strain transduction and acts as a strain gauge independent of crystallographic orientation.
Journal ArticleDOI
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors
Lars Knoll,Qing-Tai Zhao,A. Nichau,Stefan Trellenkamp,S. Richter,A. Schafer,David Esseni,Luca Selmi,Konstantin Bourdelle,S. Mantl +9 more
TL;DR: In this article, the first uniaxially tensile strained Si (sSi) nanowire (NW) tunneling field effect transistors (TFETs) are fabricated.
Journal ArticleDOI
Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs
TL;DR: In this paper, the authors investigated the silicon thickness dependence of the low field electron mobility in ultrathin silicon-on-insulator (UT-SOI) MOSFETs operated both in single and in double-gate mode.
Journal ArticleDOI
Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain
TL;DR: In this paper, Monte Carlo simulations including quantum corrections to the potential and calibrated scattering models are used to study electronic transport in bulk and double-gate silicon-on-insulator MOSFETs with L/sub G/ down to 14-nm designed according to the 2003 International Technology Roadmap for Semiconductors.
Book
Nanoscale MOS Transistors: Semi-Classical Transport and Applications
TL;DR: In this article, the Monte Carlo method for the Boltzmann transport equation was used to compute the equi-energy lines with the k-p model and the charge density produced by a perturbation potential.