D
David J. Meyer
Researcher at United States Naval Research Laboratory
Publications - 134
Citations - 1933
David J. Meyer is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Molecular beam epitaxy & High-electron-mobility transistor. The author has an hindex of 21, co-authored 126 publications receiving 1440 citations. Previous affiliations of David J. Meyer include United States Department of the Navy & Pennsylvania State University.
Papers
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GaN/NbN epitaxial semiconductor/superconductor heterostructures.
Rusen Yan,Guru Khalsa,Suresh Vishwanath,Yimo Han,John Wright,Sergei Rouvimov,D. Scott Katzer,Neeraj Nepal,Brian P. Downey,David A. Muller,Huili Grace Xing,David J. Meyer,Debdeep Jena +12 more
TL;DR: The demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductor opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.
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Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
TL;DR: In this article, the authors demonstrate growth of ScxAl1-xN on GaN and SiC substrates using plasma-assisted molecular beam epitaxy with x'='0.14'-0.24'.
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Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation
TL;DR: In this article, a fully coupled multi-dimensional continuum model of the thermoelectromechanics of GaN HEMTs is presented and discussed, and the possibilities of crack propagation and fracture of the AlGaN are also analyzed.
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Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-$k$ Dielectrics
TL;DR: In this paper, the effects of GaN surface pretreatments on the material and electrical properties of Al2O3 dielectric deposited by atomic layer deposition (ALD) were reported.
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Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics.
Vikrant J. Gokhale,Brian P. Downey,D. Scott Katzer,Neeraj Nepal,Andrew C. Lang,Rhonda M. Stroud,David J. Meyer +6 more
TL;DR: In this article, an epitaxial high-overtone bulk acoustic wave resonator (HBAR) was proposed to achieve a power injection efficiency of >99% from transducer to phonon cavity.