Davud V. Guseinov

TL;DR: Agudov et al. as discussed by the authors proposed a stochastic model for a memristive system by generalizing known approaches and experimental results, and validated their theoretical model by experiments carried out on a Memristive device based on Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti multilayer structure.

TL;DR: In this article, a comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering is presented.

TL;DR: In this article, the effect of white Gaussian noise superimposed on the sub-threshold sinusoidal driving signal is analyzed through the time series statistics of the resistive switching parameters, the spectral response to a periodic perturbation and the signal-to-noise ratio at the output of the nonlinear system.

TL;DR: In this paper, the authors studied the performance of bipolar resistive switching in SiO x -based thin-film memristor structures deposited by magnetron sputtering technique on the TiN/Ti metalized SiO 2 /Si substrates and established that, after electroforming, the structure can be switched between the quasi-ohmic low-resistance state related to silicon chains (conducting filaments) and the high-resolution state with semiconductor-like hopping mechanism of charge transport through the defects in silicon oxide.

TL;DR: This work investigates the constructive role of an external noise signal, in the form of a low-rate Poisson sequence of pulses supplied to all inputs of a spiking neural network, consisting in maintaining for a long time or even recovering a memory trace of the image without its direct renewal (or rewriting).