Journal ArticleDOI
Stochastic resonance in a metal-oxide memristive device
Alexey Mikhaylov,Davud V. Guseinov,Alexey Belov,D. S. Korolev,V.A. Shishmakova,M. N. Koryazhkina,Dmitry Filatov,O. N. Gorshkov,D. Maldonado,F. J. Alonso,Juan Bautista Roldán,A. V. Krichigin,N. V. Agudov,Alexander A. Dubkov,Angelo Carollo,Bernardo Spagnolo,Bernardo Spagnolo +16 more
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In this article, the effect of white Gaussian noise superimposed on the sub-threshold sinusoidal driving signal is analyzed through the time series statistics of the resistive switching parameters, the spectral response to a periodic perturbation and the signal-to-noise ratio at the output of the nonlinear system.Abstract:
The stochastic resonance phenomenon has been studied experimentally and theoretically for a state-of-art metal-oxide memristive device based on yttria-stabilized zirconium dioxide and tantalum pentoxide, which exhibits bipolar filamentary resistive switching of anionic type The effect of white Gaussian noise superimposed on the sub-threshold sinusoidal driving signal is analyzed through the time series statistics of the resistive switching parameters, the spectral response to a periodic perturbation and the signal-to-noise ratio at the output of the nonlinear system The stabilized resistive switching and the increased memristance response are revealed in the observed regularities at an optimal noise intensity corresponding to the stochastic resonance phenomenon and interpreted using a stochastic memristor model taking into account an external noise source added to the control voltage The obtained results clearly show that noise and fluctuations can play a constructive role in nonlinear memristive systems far from equilibriumread more
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Posted Content
Spatio-temporal behaviour of the deep chlorophyll maximum in Mediterranean Sea: Development of a stochastic model for picophytoplankton dynamics
G. Denaro,Davide Valenti,A. La Cognata,Bernardo Spagnolo,Angelo Bonanno,Gualtiero Basilone,Salvatore Mazzola,S. Zgozi,Salvatore Aronica,Christophe Brunet +9 more
TL;DR: In this article, a stochastic reaction-diffusion-taxis model was used to analyze the picophytoplankton dynamics in the basin of the Mediterranean Sea, characterized by poorly mixed waters.
Journal ArticleDOI
On the Thermal Models for Resistive Random Access Memory Circuit Simulation
Juan Bautista Roldán,G. González-Cordero,Rodrigo Picos,Enrique Miranda,Felix Palumbo,Francisco Jiménez-Molinos,Enrique Moreno,D. Maldonado,Santiago Boyeras Baldomá,Mohamad Moner Al Chawa,Carol de Benito,Stavros G. Stavrinides,Jordi Suñé,Leon O. Chua +13 more
TL;DR: In this paper, a thermal model for resistive random access memories (RRAMs) is presented and a 3D numerical solution of the heat equation within a complete RRAM simulator is also taken into account.
Journal ArticleDOI
Implementation of a reservoir computing system using the short-term effects of Pt/HfO2/TaOx/TiN memristors with self-rectification
Hojeong Ryu,Sungjun Kim +1 more
TL;DR: A memristor-based hardware reservoir computing system using HfO2/TaOx bilayer based Memristor that can imitate the short-term memory effects and investigate the transient characteristics in terms of the interval required between pulse stimulation to return its initial state.
Journal ArticleDOI
Conduction mechanism effect on physical unclonable function using Al2O3/TiOX memristors
TL;DR: In this paper, the performance of a PUF using Al2O3/TiOx based memristors was evaluated using a conduction mechanism analysis, and it was confirmed that the distribution of high-resistance state (HRS) is wider than that of lowresistance states (LRS) due to the direct-tunneling gap.
Journal ArticleDOI
Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system
Tae-Hyeon Kim,Sung Joon Kim,Kyungho Hong,Jinwoo Park,Yeongjin Hwang,Byung-Gook Park,Hyungjin Kim +6 more
TL;DR: In this paper, an Al2O3/TiOx-based resistive switching memory array with compliance current adjustment (Icc) control was fabricated, and 64-level conductance states were statistically demonstrated.
References
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Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI
Memristor-The missing circuit element
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI
Nanoionics-based resistive switching memories
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
Journal ArticleDOI
Introduction to Time Series and Forecasting.
TL;DR: A general approach to Time Series Modelling and ModeLLing with ARMA Processes, which describes the development of a Stationary Process in Terms of Infinitely Many Past Values and the Autocorrelation Function.
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Introduction to time series and forecasting
TL;DR: In this paper, the authors present a general approach to time series analysis based on simple time series models and the Autocorrelation Function (AFF) and the Wold Decomposition.
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