Desalegne Teweldebrhan

TL;DR: Nolen et al. as mentioned in this paper proposed and experimentally tested a fast and fully automated approach for determining the number of atomic planes in graphene samples, which allows for in situ identification of the borders of the regions with the same number of atoms.

TL;DR: In this article, the authors present results of the study of the low-frequency excess noise in thin films made of Bi 2 Se 3 topological insulator material and verify the quality and crystallinity of the fabricated devices with the micro-Raman spectroscopy.

TL;DR: In this paper, the authors report on the low-frequency current fluctuations and electronic noise in thin-films made of bismuth selenide topological insulators, which are used as the current conducting channels in the four-and two-contact devices.

TL;DR: In this paper, a new method for graphene synthesis and assessment of the properties of the resulting large-area graphene layers was reported, and the analysis of the G peak, D, T+D and 2D bands in the Raman spectra under the 488-nm laser excitation indicate that the high pressure-high temperature technique is capable of producing the high quality large-scale single-layer graphene with a low defect density.

TL;DR: In this paper, a large-area graphene layer identification technique was developed for research and industrial applications based on the analysis of optical microscopy images using computational image processing algorithms, which can be applied to graphene on arbitrary substrates and used for other atomically thin materials.