D
Dipankar Saha
Researcher at Indian Institute of Science
Publications - 20
Citations - 321
Dipankar Saha is an academic researcher from Indian Institute of Science. The author has contributed to research in topics: Monolayer & Low-power electronics. The author has an hindex of 8, co-authored 20 publications receiving 210 citations. Previous affiliations of Dipankar Saha include Indian Institute of Technology Bombay & Jadavpur University.
Papers
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Journal ArticleDOI
Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics.
Abin Varghese,Abin Varghese,Abin Varghese,Dipankar Saha,Kartikey Thakar,Vishwas Jindal,Sayantan Ghosh,Nikhil V. Medhekar,Sandip Ghosh,Saurabh Lodha +9 more
TL;DR: Long term air-stability and facile single contact metal fabrication process make the multi-functional few-layer WSe2/ReS2 heterostructure diode technologically promising for next-generation optoelectronics.
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Atomistic modeling of the metallic-to-semiconducting phase boundaries in monolayer MoS2
Dipankar Saha,Santanu Mahapatra +1 more
TL;DR: In this article, the electronic structures of the metallic-to-semiconducting phase boundaries, which appear to dictate the carrier injection in such transistors, are not yet well understood.
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Scalability assessment of Group-IV mono-chalcogenide based tunnel FET.
TL;DR: This study shows that monolayer GeSe-TFET is scalable till 8 nm while preserving ON/OFF current ratio higher than 104.5 pA/μm and self-consistent solution of the transport equations within the non-equilibrium Green’s function formalism and the Poisson's equation based electrostatic potential.
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Analytical insight into the lattice thermal conductivity and heat capacity of monolayer MoS2
Dipankar Saha,Santanu Mahapatra +1 more
TL;DR: In this article, a detailed theoretical study on the lattice thermal conductivity of a suspended monolayer MoS2, far beyond its ballistic limit, is reported, based on the use of Boltzmann transport equation (BTE) within the relaxation time approximation (RTA), along with first-principles calculations.
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Anisotropic transport in 1T' monolayer MoS2 and its metal interfaces.
Dipankar Saha,Santanu Mahapatra +1 more
TL;DR: First principles based quantum transport calculations demonstrate that, due to the clusterization of "Mo" atoms in 1T' MoS2, the transmission along the zigzag direction is significantly higher than that in the armchair direction, which could pave the way for designing high performance phase-engineeredMoS2 based electron devices.