Dolar Khachariya

TL;DR: In this article, a large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100

TL;DR: In this article, Si-implanted AlN with high conductivity (>1 Ω−1 cm−1) and high carrier concentration (5'×'1018 cm−3) was demonstrated.

TL;DR: In this paper, a method for nanowire formation by natural selection during wet anisotropic chemical etching in boiling phosphoric acid was demonstrated, where nanowires of sub-10nm lateral dimensions and lengths of 700nm or more were naturally formed during the wet etching due to the convergence of the nearby crystallographic hexagonal etch pits.

TL;DR: In this paper, an electrically injected ultra-low threshold (8.9 nA) room temperature InGaN/GaN based lateral nanowire laser is demonstrated, where a polymethyl methacrylate (PMMA) and air dielectric distributed mirror provide an optical feedback, which together with one-dimensional density of states cause ultra low threshold lasing.

TL;DR: In this article, the authors demonstrated AlGaN/GaN based high electron mobility transistors with scaled source extension regions using non-alloyed ohmic contacts to two-dimensional electron gas (2-DEG).