Pramod Reddy

TL;DR: In this article, the state of the art for the most important aspects of UV emitters, their challenges and their outlook for future developments are summarized. But, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance ofUV emitters to be pushed far beyond the current state.

TL;DR: In this article, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN.

TL;DR: In this paper, the effect of polarity on surface electronic properties was studied using x-ray photoelectron spectroscopy (XPS) data and the shift in charge neutrality levels and barrier heights due to polarity and the density of surface states on AlN and GaN were estimated from XPS measurements.

TL;DR: In this paper, the formation energies and optical signatures of these defects in AlN are calculated and utilized in a grand canonical charge balance solver to identify carrier concentrations as a function of Si content.

TL;DR: In this paper, a controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system, and high selectivity between AlN and AlxGa1−xN (up to 12×) was found to be critical in achieving effective substrate thinning or removal, thus increasing light extraction efficiency.