E
Erhard Kohn
Researcher at North Carolina State University
Publications - 14
Citations - 146
Erhard Kohn is an academic researcher from North Carolina State University. The author has contributed to research in topics: Passivation & Leakage (electronics). The author has an hindex of 5, co-authored 14 publications receiving 92 citations. Previous affiliations of Erhard Kohn include University of Cambridge.
Papers
More filters
Journal ArticleDOI
Defect-free Ni/GaN Schottky barrier behavior with high temperature stability
Pramod Reddy,Biplab Sarkar,Felix Kaess,Michael Gerhold,Erhard Kohn,Ramon Collazo,Zlatko Sitar +6 more
TL;DR: In this paper, defect-free homogeneous behavior of Ni Schottky contacts patterned on surface treated n-GaN by photolithography with unity ideality factor, high temperature stability, and low reverse leakage was reported.
Journal ArticleDOI
High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Pramod Reddy,M. Hayden Breckenridge,Qiang Guo,Andrew Klump,Dolar Khachariya,Spyridon Pavlidis,W. J. Mecouch,Seiji Mita,Baxter Moody,James Tweedie,Ronny Kirste,Erhard Kohn,Ramon Collazo,Zlatko Sitar +13 more
TL;DR: In this article, a large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100
Journal ArticleDOI
High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies
Pramod Reddy,Shun Washiyama,Felix Kaess,M. Hayden Breckenridge,M. Hayden Breckenridge,Luis H. Hernandez-Balderrama,Brian B. Haidet,Dorian Alden,Alexander Franke,Biplab Sarkar,Erhard Kohn,Ramon Collazo,Zlatko Sitar +12 more
TL;DR: In this paper, the authors employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on AlxGa1-xN via low pressure chemical vapor deposition.
Journal ArticleDOI
On Ni/Au Alloyed Contacts to Mg-Doped GaN
Biplab Sarkar,Pramod Reddy,Andrew Klump,Felix Kaess,Robert Rounds,Ronny Kirste,Seiji Mita,Erhard Kohn,Ramon Collazo,Zlatko Sitar +9 more
TL;DR: In this paper, the Ni/Au contacts to p-GaN were studied as a function of free hole concentration in GaN using planar transmission line measurement structures, and two contributions to the contact resistance were identified: the spreading resistance in the semiconductor developed by the current crowding around the electrically active clusters, and diode-type behavior at the interface of the electrophoresis with the semiconductors.
Journal ArticleDOI
High free carrier concentration in p-GaN grown on AlN substrates
Biplab Sarkar,Seiji Mita,Pramod Reddy,Andrew Klump,Felix Kaess,James Tweedie,Isaac Bryan,Zachary Bryan,Ronny Kirste,Erhard Kohn,Ramon Collazo,Zlatko Sitar +11 more
TL;DR: In this paper, the free hole concentration exceeding 1018 cm−3 and resistivity as low as 0.7 Ω cm are reported for p-GaN layers grown by metalorganic vapor phase epitaxy on single crystal AlN substrates.