Qiang Guo

TL;DR: In this article, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN.

TL;DR: Optically pumped lasing from AlGaN/AlN multiple quantum wells grown on single-crystalline AlN substrates with lasing thresholds as low as 6 kW/cm2 is demonstrated via the reduction of unintentional point defects in the active region and waveguide, which reduces the nonradiative recombination by 2 orders of magnitude.

TL;DR: In this paper, a chemical potential control (CPC) model was proposed to reduce compensation in Si-doped Al-rich AlGaN by impeding the formation of VIII+nSiIII complexes under III-richer conditions, while the impurity compensation by nitrogen site (CN) was reduced by making the growth environment Nricher.

TL;DR: In this article, a large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100

TL;DR: In this article, the average bulk thermal conductivity of free-standing physical vapor transport and hydride vapor phase epitaxy single crystal AlN samples with different impurity concentrations was analyzed using the 3ω method in the temperature range of 30-325 K.