D
Dong Keun Lee
Researcher at Seoul National University
Publications - 24
Citations - 185
Dong Keun Lee is an academic researcher from Seoul National University. The author has contributed to research in topics: Resistive random-access memory & Engineering. The author has an hindex of 6, co-authored 18 publications receiving 82 citations.
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Journal ArticleDOI
Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering.
Jinju Lee,Ji Ho Ryu,Boram Kim,Fayyaz Hussain,Chandreswar Mahata,Eunjin Sim,Muhammad Ismail,Yawar Abbas,Haider Abbas,Dong Keun Lee,Min-Hwi Kim,Yoon Kim,Chang Hwan Choi,Byung-Gook Park,Sungjun Kim +14 more
TL;DR: Synaptic Characteristics of Amorphous Boron Nitride-based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering is studied.
Journal ArticleDOI
Uniformity Improvement of SiN x -Based Resistive Switching Memory by Suppressed Internal Overshoot Current
Min-Hwi Kim,Sungjun Kim,Suhyun Bang,Tae-Hyeon Kim,Dong Keun Lee,Seongjae Cho,Byung-Gook Park +6 more
TL;DR: In this article, the effect of additional thin SiO2 layer on switching variability of SiN x -based resistive memory (RRAM) was investigated, and it was shown that excessive LRS state generated in set operation results in large reset current and abrupt reset operation.
Journal ArticleDOI
Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p + -Si RRAM for synaptic device application
Suhyun Bang,Min-Hwi Kim,Tae-Hyeon Kim,Dong Keun Lee,Sungjun Kim,Seongjae Cho,Byung-Gook Park +6 more
TL;DR: In this article, a bilayer IGZO film consisting of an oxygen-deficient layer and an oxygenrich one was developed by controlling the oxygen concentrations in the respective switching layers in the expectation of gradual switching owing to an oxygen vacancy reservoir.
Journal ArticleDOI
Fabrication and Characterization of TiO x Memristor for Synaptic Device Application
Tae-Hyeon Kim,Min-Hwi Kim,Suhyun Bang,Dong Keun Lee,Sungjun Kim,Seongjae Cho,Byung-Gook Park +6 more
TL;DR: In this paper, a two-terminal TiO x -based memristor has been fabricated and the methods for controlling its conductance are demonstrated, which shows that the conductance changes and nonlinearity characteristics of weight update are tuned with various pulse widths and amplitudes.
Journal ArticleDOI
SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory
Chandreswar Mahata,Min-Hwi Kim,Suhyun Bang,Tae-Hyeon Kim,Dong Keun Lee,Yeon-Joon Choi,Sungjun Kim,Byung-Gook Park +7 more
TL;DR: In this article, improved resistive switching (RS) characteristics for a complementary metal-oxide-semiconductor compatible Ni/Ti/Al2O3/SiO2/Si device were demonstrated.