E
E. Muñoz
Researcher at Technical University of Madrid
Publications - 265
Citations - 6072
E. Muñoz is an academic researcher from Technical University of Madrid. The author has contributed to research in topics: Molecular beam epitaxy & Quantum well. The author has an hindex of 37, co-authored 254 publications receiving 5789 citations. Previous affiliations of E. Muñoz include ETSI & Polytechnic University of Puerto Rico.
Papers
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Journal ArticleDOI
Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
Enrique Calleja,Miguel Sanchez-Garcia,F. J. Sanchez,Fernando Calle,Fernando B. Naranjo,E. Muñoz,U. Jahn,K. H. Ploog +7 more
TL;DR: Wurtzite GaN nanocolumns are reproducibly grown by plasma-assisted molecular beam epitaxy on Si(111) and c-sapphire substrates.
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The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
Miguel Sanchez-Garcia,E. Calleja,Eva Monroy,F. J. Sanchez,Fernando Calle,E. Muñoz,R. Beresford +6 more
TL;DR: In this article, the effect of the III/V ratio and substrate temperature on the growth of GaN and A1N films on Si(1 1 1) substrates by molecular beam epitaxy, where active nitrogen was generated by a radio frequency plasma source.
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III nitrides and UV detection
TL;DR: In this paper, materials and devices issues are considered to provide a full picture of the advances in nitride UV photodetection, including basic structures like photoconductors, Schottky, p-i-n and metal-semiconductor-metal photodiodes and phototransistors.
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High-performance GaN p-n junction photodetectors for solar ultraviolet applications
Eva Monroy,E. Muñoz,F. J. Sánchez,Fernando Calle,E. Calleja,Bernard Beaumont,Pierre Gibart,J. A. Muñoz,F. Cusso +8 more
TL;DR: In this paper, the fabrication and characterization of ultraviolet photodetectors based on GaN p-n junctions is reported, which are grown by metalorganic vapour phase epitaxy on basal-plane sapphire substrates.
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Yellow luminescence and related deep states in undoped GaN
Enrique Calleja,F. J. Sanchez,Durga Basak,Miguel Sanchez-Garcia,E. Muñoz,I. Izpura,Fernando Calle,Jose Manuel G. Tijero,José Luis Sánchez-Rojas,Bernard Beaumont,P. Lorenzini,Pierre Gibart +11 more
TL;DR: In this article, a deep trap that captures photoelectrons from the valence band, after being emptied with photons above 2.5 eV, is proposed as the origin of these features.