Journal ArticleDOI
The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
Miguel Sanchez-Garcia,E. Calleja,Eva Monroy,F. J. Sanchez,Fernando Calle,E. Muñoz,R. Beresford +6 more
TLDR
In this article, the effect of the III/V ratio and substrate temperature on the growth of GaN and A1N films on Si(1 1 1) substrates by molecular beam epitaxy, where active nitrogen was generated by a radio frequency plasma source.About:
This article is published in Journal of Crystal Growth.The article was published on 1998-01-01. It has received 313 citations till now. The article focuses on the topics: Molecular beam epitaxy & Substrate (electronics).read more
Citations
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Journal ArticleDOI
GaN based nanorods for solid state lighting
Shunfeng Li,Andreas Waag +1 more
TL;DR: In this paper, a review of the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN Nanorods is presented. But, the authors also discuss problems and open questions, which may impose obstacles during the future development of a GaN-based LED technology.
Journal ArticleDOI
Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays
TL;DR: In this paper, the Ti-mask selective-area growth (SAG) of GaN nanocolumns was performed at the growth temperature of 900°C, while decreasing the supplied nitrogen flow rate ( Q N2 ) from 3.5 to 0.5.
Journal ArticleDOI
III nitrides and UV detection
TL;DR: In this paper, materials and devices issues are considered to provide a full picture of the advances in nitride UV photodetection, including basic structures like photoconductors, Schottky, p-i-n and metal-semiconductor-metal photodiodes and phototransistors.
Journal ArticleDOI
On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
Jelena Ristic,Enrique Calleja,Sergio Fernández-Garrido,Laurent Cerutti,Achim Trampert,Uwe Jahn,Klaus H. Ploog +6 more
TL;DR: In this article, a study of the GaN nanocolumns nucleation and growth by molecular beam epitaxy on Si(111) is presented, where Ga droplets with different diameters (340-90 nm) were deposited on the substrate prior to growth, to determine any effect on the Nanocolumn's size and distribution.
Journal ArticleDOI
Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy: Doping, optical, and electrical properties
Enrique Calleja,Miguel Sanchez-Garcia,F. J. Sanchez,Fernando Calle,Fernando B. Naranjo,E. Muñoz,Sergio I. Molina,Ana M. Sanchez,F. J. Pacheco,Rafael García +9 more
TL;DR: In this article, a combination of optimized AIN buffer layers and a two-step growth process leads to GaN layers of high crystal quality (8 arcmin X-ray diffraction full-width at half-maximum) and flat surfaces (57 A rms).
References
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Journal ArticleDOI
GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers
TL;DR: In this paper, organometallic vapor phase epitaxy (OMVPE) was used to grow monocrystalline GaN(0001) thin films, void of oriented domain structures and associated low-angle grain boundaries.
Journal ArticleDOI
The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
TL;DR: In this article, a single crystal of AlN was used as an intermediate layer for the growth of single crystalline GaN films with flat surfaces, which was shown to improve the optical properties of GaN.
Journal ArticleDOI
Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates
W. C. Hughes,W. H. Rowland,Mark Johnson,Shizuo Fujita,J. W. Cook,J. F. Schetzina,J. Ren,John A. Edmond +7 more
TL;DR: In this paper, two types of nitrogen plasma sources, an electron cyclotron resonance (ECR) plasma source and a radio frequency (RF) plasmas source, were used for the growth of GaN by molecular beam epitaxy (MBE).
Journal ArticleDOI
Exciton fine structure in undoped GaN epitaxial films.
D. Volm,K. Oettinger,T. Streibl,Dmitri Kovalev,M. Ben-Chorin,J. Diener,Bruno K. Meyer,Jacek A. Majewski,L. Eckey,Axel Hoffmann,Hiroshi Amano,Isamu Akasaki,Kazumasa Hiramatsu,Theeradetch Detchprohm +13 more
TL;DR: The experimental results are compared to a theoretical calculation using a first-principle total-energy pseudopotential method within the local-density formalism and there is evidence for the existence of two shallow donors in GaN.
Journal ArticleDOI
Selective growth of zinc‐blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy
TL;DR: In this paper, the growth of GaN with a zinc-blende, wurtzite, or a mixed phase structure on GaP and GaAs substrates by a low-temperature modified molecular beam epitaxy technique was reported.