E
Ekta Goel
Researcher at Indian Institute of Technology (BHU) Varanasi
Publications - 28
Citations - 688
Ekta Goel is an academic researcher from Indian Institute of Technology (BHU) Varanasi. The author has contributed to research in topics: Threshold voltage & Subthreshold conduction. The author has an hindex of 11, co-authored 24 publications receiving 527 citations.
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2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO 2 /HfO 2 Stacked Gate-Oxide Structure
Sanjay Kumar,Ekta Goel,Kunal Singh,Balraj Singh,Prince Kumar Singh,Kamalaksha Baral,Satyabrata Jit +6 more
TL;DR: In this paper, a physics-based 2D analytical model for surface potential, electric field, drain current, subthreshold swing (SS) and threshold voltage of dual-material (DM) double-gate tunnel FETs with SiO2/HfO2 stacked gate-oxide structure has been developed.
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A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO 2 /High- $k$ Stacked Gate-Oxide Structure
TL;DR: In this article, a 2D analytical model for electrical characteristics such as surface potential, drain current, and threshold voltage of double-gate tunnel FETs with a SiO2/High- ${k}$ stacked gate-oxide structure is proposed.
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2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs
TL;DR: In this article, a 2D analytical model for the surface potential and threshold voltage of graded-channel dual-material double-gate (GCDMDG) MOSFETs obtained by intermixing the concepts of graded doping in channel and dual material in gate engineering has been proposed.
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Analytical Modeling of Channel Potential and Threshold Voltage of Double-Gate Junctionless FETs With a Vertical Gaussian-Like Doping Profile
TL;DR: In this article, an analytical 2D model for the channel potential and threshold voltage of double-gate junctionless FETs with a vertical Gaussian-like doping profile was proposed.
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2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO 2 /HfO 2 Stacked Gate-Oxide Structure
Sanjay Kumar,Kunal Singh,Sweta Chander,Ekta Goel,Prince Kumar Singh,Kamalaksha Baral,Balraj Singh,Satyabrata Jit +7 more
TL;DR: In this paper, a continuous 2D analytical drain current model of double-gate (DG) heterojunction tunnel field effect transistors (HJTFETs) with a SiO2/HfO2 stacked gate-oxide structures is presented.