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Sanjay Kumar

Researcher at Indian Institute of Technology (BHU) Varanasi

Publications -  67
Citations -  966

Sanjay Kumar is an academic researcher from Indian Institute of Technology (BHU) Varanasi. The author has contributed to research in topics: Threshold voltage & Gate oxide. The author has an hindex of 14, co-authored 66 publications receiving 718 citations. Previous affiliations of Sanjay Kumar include Motilal Nehru National Institute of Technology Allahabad.

Papers
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2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO 2 /HfO 2 Stacked Gate-Oxide Structure

Sanjay Kumar, +6 more
- 07 Feb 2017 - 
TL;DR: In this paper, a physics-based 2D analytical model for surface potential, electric field, drain current, subthreshold swing (SS) and threshold voltage of dual-material (DM) double-gate tunnel FETs with SiO2/HfO2 stacked gate-oxide structure has been developed.
Journal ArticleDOI

A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO 2 /High- $k$ Stacked Gate-Oxide Structure

Sanjay Kumar, +5 more
- 07 Jun 2016 - 
TL;DR: In this article, a 2D analytical model for electrical characteristics such as surface potential, drain current, and threshold voltage of double-gate tunnel FETs with a SiO2/High- ${k}$ stacked gate-oxide structure is proposed.
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2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs

Ekta Goel, +5 more
- 04 Feb 2016 - 
TL;DR: In this article, a 2D analytical model for the surface potential and threshold voltage of graded-channel dual-material double-gate (GCDMDG) MOSFETs obtained by intermixing the concepts of graded doping in channel and dual material in gate engineering has been proposed.
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Analytical Modeling of Channel Potential and Threshold Voltage of Double-Gate Junctionless FETs With a Vertical Gaussian-Like Doping Profile

Balraj Singh, +5 more
- 03 May 2016 - 
TL;DR: In this article, an analytical 2D model for the channel potential and threshold voltage of double-gate junctionless FETs with a vertical Gaussian-like doping profile was proposed.
Journal ArticleDOI

2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO 2 /HfO 2 Stacked Gate-Oxide Structure

Sanjay Kumar, +7 more
- 01 Jan 2018 - 
TL;DR: In this paper, a continuous 2D analytical drain current model of double-gate (DG) heterojunction tunnel field effect transistors (HJTFETs) with a SiO2/HfO2 stacked gate-oxide structures is presented.