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Open AccessJournal ArticleDOI

Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes

TLDR
In this paper, a two-dimensional photonic crystal (PhC) light emitting diodes (LEDs) design using both in-plane and index guiding layers (IGLs) in the vertical direction is proposed.
Abstract
Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction. The effects of PhCs on light extraction and emission directionality from GaN LEDs are studied experimentally. Angular-resolved electroluminescence clearly shows the combined effect of controlling the vertical mode profile with the IGLs and tailoring the emission profile with the periodicity of the PhC lattice. Increases in directional emission as high as 3.5 times are achieved by taking advantage of this directionality and guided mode control.

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Journal ArticleDOI

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

TL;DR: In this paper, the authors review LED performance targets that are needed to achieve these benefits and highlight some of the remaining technical challenges, and describe recent advances in LED materials and novel device concepts that show promise for realizing the full potential of LED-based white lighting.
Journal ArticleDOI

Reliability of Organic Field‐Effect Transistors

TL;DR: In this article, the reliability of organic field effect transistors has been discussed, with a particular focus on degradation of device characteristics under bias stress conditions, including dependence on stress voltage and duty cycle, gate dielectric, environmental conditions, light exposure, and contact resistance.
Journal ArticleDOI

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

TL;DR: Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-emitting diodes (LEDs) is investigated and the growths of linearly-shaped staggered In GaN QWs by employing graded growth temperature grading are presented.
Journal ArticleDOI

Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics

TL;DR: In this paper, the authors highlight the characteristics of metal assisted chemical etching of silicon (Si) including controllability of the produced sidewall roughness, the inherent high aspect ratio, the weak crystal orientation dependence, impurity doping and solution concentration dependent porosity, as well as the applicability of MacEtch to non-Si based semiconductor materials including III-V compound semiconductors.
Journal ArticleDOI

Enhancement of light extraction from light emitting diodes

TL;DR: In this paper, the authors reviewed approaches to enhanced light extraction grouped into two sets depending on whether their application results in the change in the spontaneous emission rate or the angular distribution, or both.
References
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Journal ArticleDOI

Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

TL;DR: In this paper, an n-side-up GaN-based LED with a hexagonal "conelike" surface has been fabricated by using the laser lift-off technique followed by an anisotropic etching process to roughen the surface.
Journal ArticleDOI

Photonic band-gap structures

TL;DR: In this article, the photonic band gap structures, those three-dimensional periodic dielectric structures that are to photon waves as semiconductor crystals are to electron waves, are discussed.
Journal ArticleDOI

High-power AlGaInN flip-chip light-emitting diodes

TL;DR: In this article, the authors presented a flip-chip light-emitting diodes (FCLEDs) with a large emitting area (∼0.70 mm2) and an optimized contacting scheme allowing high current (200-1000 mA, J∼30-143 A/cm2) operation with low forward voltages.
Journal ArticleDOI

High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

TL;DR: In this article, a truncated-inverted-pyramid (TIP) chip geometry was proposed to decrease the mean photon path length within the crystal, and thus reduce the effects of internal loss mechanisms.
Journal ArticleDOI

Impact of planar microcavity effects on light extraction-Part I: basic concepts and analytical trends

TL;DR: In this article, an approximate approach is used showing the importance of small cavity order m/sub c/ and of the m/ sub c/n/sup 2/ ratio.
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