Luca Nela

TL;DR: By removing the need for large external heat sinks, this approach should enable the realization of very compact power converters integrated on a single chip, potentially extending Moore's law and greatly reducing the energy consumption in cooling of electronics.

TL;DR: A large-area high-performance flexible pressure sensor built on an active matrix of 16 × 16 carbon nanotube thin-film transistors (CNT TFTs) that exhibits superior flexible TFT performance with high mobility and large current density, along with a high device yield of nearly 99% over 4 inch sample area.

TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.

TL;DR: In this paper, the authors show that high-performance carbon nanotube TFTs and complementary circuits can be fabricated on flexible polyimide substrates using a high-yield, scalable process.

TL;DR: In this article, the performance of four commercial gallium-nitride (GaN) power devices in a wide temperature range between 400 and 4.2 K was investigated and compared, showing the promising potential of the GaN technology for low-temperature applications and providing precious insights to properly design power systems operating under cryogenic temperatures and maximize their efficiency.