E
Enrique Escobedo-Cousin
Researcher at Newcastle University
Publications - 38
Citations - 238
Enrique Escobedo-Cousin is an academic researcher from Newcastle University. The author has contributed to research in topics: Graphene & Surface roughness. The author has an hindex of 9, co-authored 35 publications receiving 212 citations. Previous affiliations of Enrique Escobedo-Cousin include Université catholique de Louvain.
Papers
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Journal ArticleDOI
On-chip tensile testing of nanoscale silicon free-standing beams
Umesh Kumar Bhaskar,Vikram Passi,Samer Houri,Enrique Escobedo-Cousin,Sarah H. Olsen,Thomas Pardoen,Jean-Pierre Raskin +6 more
TL;DR: In this paper, the Young's modulus was observed to decrease from 160 GPa down to 108 GPa when varying the thickness from 200 down to 50 nm and the fracture strain increases when decreasing the volume of the test specimen to reach 5% in the smallest samples.
Journal ArticleDOI
Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon
Enrique Escobedo-Cousin,Konstantin Vassilevski,T. Hopf,Nicholas G. Wright,Anthony O'Neill,A. B. Horsfall,Jonathan P. Goss,Peter J. Cumpson +7 more
TL;DR: In this paper, a few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabrication scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods.
Journal ArticleDOI
Strained Si/SiGe MOS technology: Improving gate dielectric integrity
Sarah H. Olsen,L. Yan,R Agaiby,Enrique Escobedo-Cousin,Anthony O'Neill,Per-Erik Hellström,Mikael Östling,Klara Lyutovich,Erich Kasper,Cor Claeys,Evan H. C. Parker +10 more
TL;DR: In this paper, a novel thin virtual substrate aimed at reducing self-heating effects is investigated, which provides further improvements to gate oxide integrity, reliability and lifetime compared with conventional thick virtual substrates.
Journal ArticleDOI
Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs
Sarah H. Olsen,Enrique Escobedo-Cousin,JB Varzgar,R Agaiby,Johan Seger,P Dobrosz,Sanatan Chattopadhyay,Steve Bull,Anthony O'Neill,Per-Erik Hellström,J. Edholm,Mikael Östling,Klara Lyutovich,Michael Oehme,Erich Kasper +14 more
TL;DR: In this paper, the impact of SiGe device self-heating is compared for strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates.
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Modeling of the Threshold Voltage in Strained $\hbox{Si/Si}_{1 - x} \hbox{Ge}_{x}/\hbox{Si}_{1 - y}\hbox{Ge}_{y}(x \geq y)$ CMOS Architectures
Y.L. Tsang,Sanatan Chattopadhyay,Suresh Uppal,Enrique Escobedo-Cousin,Hiran Ramakrishnan,Sarah H. Olsen,Anthony O'Neill +6 more
TL;DR: In this paper, an analytical model of threshold voltage for globally strained Si/SiGe CMOS devices using a dual channel architecture is proposed, and the model provides a physical insight for the variation of for both n- and p-MOSFETs in a dual-channel architecture, and it can be generalized to be applicable to single-channel devices as well.