scispace - formally typeset
E

Eric M. Gullikson

Researcher at Lawrence Berkeley National Laboratory

Publications -  424
Citations -  15937

Eric M. Gullikson is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Extreme ultraviolet lithography & Extreme ultraviolet. The author has an hindex of 45, co-authored 412 publications receiving 14639 citations. Previous affiliations of Eric M. Gullikson include University of California, San Diego & University of California, Berkeley.

Papers
More filters
Proceedings ArticleDOI

Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement

TL;DR: In this paper, the authors have studied wafer level pattern line width roughness (LWR) as a function of EUVL mask surface roughness via High-NA Actinic Reticle Review Tool.
Journal ArticleDOI

Resonant scattering of polarized soft X-rays for the study of magnetic oxide layers

TL;DR: In this article, the potential of resonant scattering of polarized soft X-rays applied to the study of the magnetic properties of oxide layers was investigated, and preliminary results showed that resonant X-ray scattering can be used to study the magnetism properties of iron oxides, a class of materials of high technological interest.
Journal ArticleDOI

Soft X‑ray absorption spectra in the CK region of carbon black and spectral analysis using the discrete variational Xα method

TL;DR: In this paper, the authors investigated the local structure of carbon black (CB) crystallites, and the soft X-ray absorption spectra (XAS) in the CK region of CB were measured using synchrotron radiation, and analyzed by the discrete variational (DV) Xα method.
Journal ArticleDOI

Soft X-ray emission and absorption spectroscopy of hydrofullerene

TL;DR: In this article, high-resolution soft X-ray emission and absorption spectra in the C K region of hydrofullerene, which probably consists mainly of C 60 H 36, were measured using highly brilliant synchrotron radiation to identify its molecular structure and electronic structure.
Proceedings ArticleDOI

Determining the critical size of EUV mask substrate defects

TL;DR: In this paper, a comprehensive understanding of substrate defect printability is presented and printability specifications of EUV mask substrate defects are discussed, as well as a detailed analysis of the printability properties of substrate defects.