E
Eric M. Gullikson
Researcher at Lawrence Berkeley National Laboratory
Publications - 424
Citations - 15937
Eric M. Gullikson is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Extreme ultraviolet lithography & Extreme ultraviolet. The author has an hindex of 45, co-authored 412 publications receiving 14639 citations. Previous affiliations of Eric M. Gullikson include University of California, San Diego & University of California, Berkeley.
Papers
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Proceedings ArticleDOI
Understanding EUV mask blank surface roughness induced LWR and associated roughness requirement
TL;DR: In this paper, the authors have studied wafer level pattern line width roughness (LWR) as a function of EUVL mask surface roughness via High-NA Actinic Reticle Review Tool.
Journal ArticleDOI
Resonant scattering of polarized soft X-rays for the study of magnetic oxide layers
Maurizio Sacchi,Coryn F. Hague,Susana Gota,Eric Guiot,M. Gautier-Soyer,Luca Pasquali,Stan Mrowka,Eric M. Gullikson,James H. Underwood +8 more
TL;DR: In this article, the potential of resonant scattering of polarized soft X-rays applied to the study of the magnetic properties of oxide layers was investigated, and preliminary results showed that resonant X-ray scattering can be used to study the magnetism properties of iron oxides, a class of materials of high technological interest.
Journal ArticleDOI
Soft X‑ray absorption spectra in the CK region of carbon black and spectral analysis using the discrete variational Xα method
TL;DR: In this paper, the authors investigated the local structure of carbon black (CB) crystallites, and the soft X-ray absorption spectra (XAS) in the CK region of CB were measured using synchrotron radiation, and analyzed by the discrete variational (DV) Xα method.
Journal ArticleDOI
Soft X-ray emission and absorption spectroscopy of hydrofullerene
Yasuji Muramatsu,Yuko Ueno,Takayoshi Hayashi,M. M. Grush,Eric M. Gullikson,Rupert C. C. Perera +5 more
TL;DR: In this article, high-resolution soft X-ray emission and absorption spectra in the C K region of hydrofullerene, which probably consists mainly of C 60 H 36, were measured using highly brilliant synchrotron radiation to identify its molecular structure and electronic structure.
Proceedings ArticleDOI
Determining the critical size of EUV mask substrate defects
TL;DR: In this paper, a comprehensive understanding of substrate defect printability is presented and printability specifications of EUV mask substrate defects are discussed, as well as a detailed analysis of the printability properties of substrate defects.