E
Eric M. Gullikson
Researcher at Lawrence Berkeley National Laboratory
Publications - 424
Citations - 15937
Eric M. Gullikson is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Extreme ultraviolet lithography & Extreme ultraviolet. The author has an hindex of 45, co-authored 412 publications receiving 14639 citations. Previous affiliations of Eric M. Gullikson include University of California, San Diego & University of California, Berkeley.
Papers
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Solid neon moderator for producing slow positrons
Allen P. Mills,Eric M. Gullikson +1 more
TL;DR: In this paper, it was shown that solid Ne makes a more efficient moderator than any other material known to date, achieving an efficiency of (0.30±0.02)% for a flat layer of Ne covering a 22Na deposit.
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Nonspecular x-ray scattering in a multilayer-coated imaging system
TL;DR: In this article, the effect of nonspecular x-ray scattering is to convolve the image with a point spread function that is independent of the coherence of the object illumination.
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High-resolution, high-flux, user friendly VLS beamline at the ALS for the 50–1300 eV energy region
J.H. Underwood,Eric M. Gullikson +1 more
TL;DR: A bending magnet beamline designed to operate on a third generation synchrotron light source (ALS) in the energy range 50-1300 eV was described in this paper. But the beamline was not designed for the characterization of optical elements (mirrors, gratings, multilayers, detectors etc.) but has capabilities for a wide range of measurements in other fields, in particular materials science and atomic physics.
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Electronic states in valence and conduction bands of group-III nitrides: Experiment and theory
K. Lawniczak-Jablonska,Tadeusz Suski,I. Gorczyca,N. E. Christensen,Klaus Attenkofer,Rupert C. C. Perera,Eric M. Gullikson,James H. Underwood,David L. Ederer,Z. Liliental Weber +9 more
TL;DR: In this paper, a comprehensive study of the electronic structure of group-III nitrides (AlN, GaN, InN, and BN) crystallizing in the wurtzite, zinc-blende, and graphitelike hexagonal (BN) structures is presented.
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Stable silicon photodiodes for absolute intensity measurements in the VUV and soft X-ray regions
TL;DR: Stable silicon photodiodes with 100% internal quantum efficiency have been developed for the vacuum ultraviolet and soft x-ray regions as mentioned in this paper, and the response of these detectors can be reasonably well represented by a simple model for photon energies above 40 eV.