Showing papers by "Eric Tournié published in 2009"

GaSb-based, 2.2 μm type-I laser fabricated on GaAs substrate operating continuous wave at room temperature

Abstract: We report on a Sb-based type-I laser grown on GaAs substrate, emitting continuous wave at room temperature around 2.2 μm. The device was grown using solid-source molecular beam epitaxy and comprised two GaInAsSb quantum wells embedded in AlGaAsSb barriers. Despite the large lattice mismatch, a good crystalline quality was obtained, and processed devices operated continuous wave up to 50 °C with threshold current densities in the range of 1.5–2.2 kA/cm2. An optical output power of 3.7 mW was obtained at 20 °C.

Mid-infrared GaSb-based EP-VCSELl emitting at 2.63 μm

Abstract: Electrically-pumped GaSb-based vertical-cavity surface-emitting lasers emitting up to 2.63 μm at room temperature are reported. The whole structure was grown monolithically in one run by solid-source molecular beam epitaxy. This heterostructure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and an InAsSb/GaSb tunnel junction. A quasi-CW (1 μs, 5 %) operation was obtained at room temperature for 35 μm-diameter devices with threshold current of 85 mA.

Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate

Abstract: We report on a GaSb-based type-I laser structure grown by molecular beam epitaxy on a (001) silicon substrate. A thin AlSb nucleation layer followed by a 1 μm thick GaSb buffer layer was used to accommodate the very large lattice mismatch existing with the silicon substrate. Processed devices with mesa geometry exhibited laser operation in pulsed mode with a duty cycle up to 10% at room temperature.

InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3 μm at room-temperature

Abstract: Laser diodes based on 4ML InAs/3ML GaSb/1ML InSb/3ML GaSb short-period superlattices (SPSLs) for emission in the 3-35 mum wavelength range have been investigated Lasing is demonstrated up to 300-K in pulsed conditions and up to 200-K under continuous wave operation Laser emission is centred at 33 mum, a technologically very important wavelength The results demonstrate the potential of these new active zones for mid-IR laser diodes

Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells

Abstract: Laser diodes based on a novel active zone, namely type II Ga 0.50 In 0.50 As/GaSb quantum wells where the Ga 0.50 In 0.50 As layers are under high tensile strain (3.9 %), have been investigated. Broad area diodes lased up to room temperature in the pulsed regime. Laser emission is centred at ~2.3 ?m, a technologically important wavelength, with a threshold-current density of 1.6 kA/cm 2 and a characteristic temperature T 0 = 50=K.

Room temperature, continuous wave operation of an Sb-based laser grown on GaAs substrate

Abstract: We report on the first Sb-based type-I laser grown on GaAs substrate operating continuous-wave around 2.2 µm at room-temperature. The device was grown using solid-source molecular beam epitaxy and comprised two GaInAsSb quantum-wells embedded in AlGaAsSb barriers. Despite the large lattice-mismatch, a good crystalline quality was obtained, and processed devices operated continuous wave up to 50°C, with threshold current densities in the range of 1.5 to 2.2 kA/cm2. An optical output power of 3.7 mW was obtained at 20°C.

Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrate

Abstract: We report on the fabrication and characterization of mid-infrared Sb-based lasers grown on Silicon substrates. We demonstrate room-temperature operation with low threshold current densities (∼1.5 kA/cm2), and pulsed mode up to a duty-cycle of 10%.

GaSb-based mid-IR electrically-pumped VCSELs covering the wavelength range from 2.3 to 2.7 µm

Abstract: Mid-infrared laser diodes are highly attractive sources for gas spectroscopy applications due to the presence of strong absorption lines of many gaseous species in this spectral range. Particularly, the 2.3 – 3.3 µm wavelength range contains strong absorption lines of some pollutants as CH 4 , NH 3 or HF while CO 2 and H 2 O interference absorption lines are very low which renders possible the highly selective and sensitive detection of these pollutants. Vertical-cavity surface-emitting lasers (VCSELs) appear especially well adapted to be used as laser sources for absorption spectroscopy due to several intrinsic characteristics that they offer. The low threshold, single-mode operation, the circular output beam with low divergence are only some of their well-known advantages.