E
Errol Antonio C. Sanchez
Researcher at Applied Materials
Publications - 125
Citations - 2824
Errol Antonio C. Sanchez is an academic researcher from Applied Materials. The author has contributed to research in topics: Layer (electronics) & Silicon. The author has an hindex of 25, co-authored 125 publications receiving 2734 citations.
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Patent
Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
David K. Carlson,Satheesh Kuppurao,Howard Beckford,Herman Diniz,Kailash Kiran Patalay,Brian H. Burrows,Jeffrey Campbell,Zouming Zhu,Xiaowei Li,Errol Antonio C. Sanchez +9 more
TL;DR: In this paper, a method and apparatus for delivering precursor materials to a processing chamber is described, which includes a gas distribution assembly having multiple gas delivery zones, each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source.
Patent
Methods to fabricate MOSFET devices using a selective deposition process
TL;DR: In this paper, a substrate is exposed to at least two different process gases to deposit one layer on top of another layer, and the next process gas contains silane and an etchant.
Patent
Method and apparatus to control semiconductor film deposition characteristics
David K. Carlson,Andrew Lam,Manish Hemkar,Errol Antonio C. Sanchez,Satheesh Kuppurao,Howard Beckford +5 more
TL;DR: In this paper, methods, systems and apparatus for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties are described.
Patent
Method of depositing a silicon germanium tin layer on a substrate
TL;DR: In this paper, a method for depositing silicon germanium tin (SiGeSn) layer on a substrate is described. But it is not shown how to obtain the SiGeSn layer on the substrate.
Patent
Method of epitaxial doped germanium tin alloy formation
TL;DR: In this paper, a germanium precursor and a tin precursor are provided to a chamber, and an epitaxial layer is formed on the substrate by either alternating or concurrent flow of a halide gas to etch the surface of the substrate.