Patent
Method of depositing a silicon germanium tin layer on a substrate
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TLDR
In this paper, a method for depositing silicon germanium tin (SiGeSn) layer on a substrate is described. But it is not shown how to obtain the SiGeSn layer on the substrate.Abstract:
Methods of depositing silicon germanium tin (SiGeSn) layer on a substrate are disclosed herein. In some embodiments, a method may include co-flowing a silicon source, a germanium source, and a tin source comprising a tin halide to a process chamber at a temperature of about 450 degrees Celsius or below and a pressure of about 100 Torr or below to deposit the SiGeSn layer on a first surface of the substrate. In some embodiments, the tin halide comprises tin tetrachloride (SnCl4).read more
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References
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Patent
Precursor source mixtures
TL;DR: A precursor source mixture is defined as a mixture of an element that is bound by at least one ligand from the group consisting of hydride, alkyl, alkenyl, cycloalkenyl, aryl, carbonyl, imido, hydrazido, phosphido, nitrosyl, nitryl and nitrate, nitrile, halide, azide, siloxy, silyl, and halogenated, sulfonated or silyated derivatives thereof, which is dissolved, emulsified or suspended
Patent
Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn
TL;DR: In this article, a novel method for synthesizing device-quality alloys and ordered phases in a Si-Ge-Sn system uses a UHV-CVD process and reactions of SnD4 with SiH3GeH3.
Patent
Technique for strain engineering in si-based transistors by using embedded semiconductor layers including atoms with high covalent radius
TL;DR: By incorporating an atomic species of increased covalent radius, which may at least partially substitute germanium, a highly efficient strain mechanism may be provided, in which the risk of stress relief due to germania conglomeration and lattice defects may be reduced as discussed by the authors.
Patent
Inhibitors for selective deposition of silicon containing films
Matthias Bauer,Pierre Tomasini +1 more
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Journal ArticleDOI
Synthesis of ternary SiGeSn semiconductors on Si(100) via SnxGe1−x buffer layers
Matthew R. Bauer,Cole Ritter,Peter A. Crozier,Jie Ren,Jose Menendez,George Wolf,John Kouvetakis +6 more
TL;DR: In this paper, single-phase Si1−x−yGexSny alloys with random diamond cubic structures are created on Si(100) via ultrahigh vacuum chemical vapor deposition reactions of SnD4 with SiH3GeH3 at 350 °C.