F
F. Al-Amoody
Researcher at University of Connecticut
Publications - 20
Citations - 248
F. Al-Amoody is an academic researcher from University of Connecticut. The author has contributed to research in topics: Quantum dot & Field-effect transistor. The author has an hindex of 7, co-authored 20 publications receiving 239 citations. Previous affiliations of F. Al-Amoody include Intel & GlobalFoundries.
Papers
More filters
Proceedings ArticleDOI
A 14 nm SoC platform technology featuring 2 nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um 2 SRAM cells, optimized for low power, high performance and high density SoC products
C.-H. Jan,F. Al-Amoody,Chang Hsu-Yu,Tsung-Yuan Chang,Y.-W. Chen,N. L. Dias,Hafez Walid M,D. Ingerly,M. Jang,Eric Karl,S. K.-Y. Shi,K. Komeyli,H. Kilambi,A. Kumar,K. Byon,Chen-Guan Lee,J. Lee,T. Leo,Pei-Chi Liu,Nidhi Nidhi,Olac-Vaw Roman W,C. Petersburg,K. Phoa,Chetan Prasad,C. Quincy,Ramaswamy Rahul,T. Rana,L. Rockford,Anand Subramaniam,Curtis Tsai,P. Vandervoorn,L. Yang,A. Zainuddin,P. Bai +33 more
TL;DR: A leading edge 14 nm SoC platform technology based upon the 2nd generation Tri-Gate transistor technology has been optimized for density, low power and wide dynamic range and a full suite of analog, mixed-signal and RF features are supported.
Journal ArticleDOI
Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II–VI Gate Insulators
Faquir C. Jain,E. Suarez,Mukesh Gogna,F. Al-Amoody,D. Butkiewicus,R. Hohner,T. Liaskas,S. Karmakar,P.-Y. Chan,B. Miller,John A. Chandy,Evan Heller +11 more
TL;DR: In this article, the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high-k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures was presented.
Journal ArticleDOI
Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators
Faquir C. Jain,B. Miller,E. Suarez,P.-Y. Chan,S. Karmakar,F. Al-Amoody,Mukesh Gogna,John A. Chandy,Evan Heller +8 more
TL;DR: In this paper, the authors present the implementation of a novel InGaAs field effect transistor (FET) using a ZnSe-ZnS-ZmgS, ZnMgS and ZnS stacked gate insulator, in a spatial wave function-switched (SWS) structural configuration.
Journal ArticleDOI
Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO 2 and Lattice-Matched II–VI Tunnel Insulator
TL;DR: In this paper, a quantum dot-based floating gate nonvolatile memory device with site-specific self-assembly of germanium oxide-cladded Germanium (GeOx-Ge) quantum dots on SiO2 and ZnS/ZnMgS/znS (II-VI lattice-matched high-κ dielectric) tunnel insulator material is presented.
Journal ArticleDOI
Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II–VI Tunnel Insulators
TL;DR: In this paper, preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S tunnel insulators were presented.