M
Mathieu Stoffel
Researcher at Max Planck Society
Publications - 62
Citations - 2003
Mathieu Stoffel is an academic researcher from Max Planck Society. The author has contributed to research in topics: Silicon & Etching (microfabrication). The author has an hindex of 24, co-authored 57 publications receiving 1918 citations. Previous affiliations of Mathieu Stoffel include European Synchrotron Radiation Facility.
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Journal ArticleDOI
Precise control of thermal conductivity at the nanoscale through individual phonon-scattering barriers
Gilles Pernot,Mathieu Stoffel,Ivana Savic,Fabio Pezzoli,Peixuan Chen,Guillaume Savelli,A. Jacquot,Joachim Schumann,U. Denker,Ingolf Mönch,Ch. Deneke,Oliver G. Schmidt,Jean-Michel Rampnoux,Shidong Wang,M. Plissonnier,Armando Rastelli,Stefan Dilhaire,Natalio Mingo +17 more
TL;DR: By engineering a set of individual phonon-scattering nanodot barriers, this work accurately tailored the thermal conductivity of a single-crystalline SiGe material in spatially defined regions as short as approximately 15 nm, resulting in a room-temperature kappa well below the amorphous limit.
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Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon
Georgios Katsaros,P. Spathis,Mathieu Stoffel,F. Fournel,Massimo Mongillo,Vincent Bouchiat,F. Lefloch,Armando Rastelli,Oliver G. Schmidt,S. De Franceschi +9 more
TL;DR: The confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductor-semiconductor devices, such as resonant supercurrent transistors, when the quantum dot is strongly coupled to the electrodes are reported.
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Three-Dimensional Composition Profiles of Single Quantum Dots Determined by Scanning-Probe-Microscopy-Based Nanotomography
Armando Rastelli,Mathieu Stoffel,Angelo Malachias,Tsvetelina Merdzhanova,Georgios Katsaros,Klaus Kern,T. H. Metzger,Oliver G. Schmidt +7 more
TL;DR: Scanning probe microscopy combined with selective wet chemical etching is employed to quantitatively determine the full three-dimensional (3D) composition profiles of single strained SiGe/Si(001) islands.
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Probing the lateral composition profile of self-assembled islands.
TL;DR: A selective etching procedure is applied to probe the lateral composition profile of self-assembled SiGe pyramids on a Si(001) substrate surface and finds that the pyramids consist of highly Si intermixed corners, whereas the edges, the apex, and the center of the Pyramids remain Ge rich.
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Fabrication, Self-Assembly, and Properties of Ultrathin AlN/GaN Porous Crystalline Nanomembranes: Tubes, Spirals, and Curved Sheets
Yongfeng Mei,Dominic J. Thurmer,Christoph Deneke,Suwit Kiravittaya,Yuanfu Chen,Armin Dadgar,Frank Bertram,B. Bastek,Alois Krost,Jürgen Christen,Thomas Reindl,Mathieu Stoffel,Emica Coric,Oliver G. Schmidt +13 more
TL;DR: No crystal-orientation dependence is observed while releasing the AlN/GaN nanomembranes from the Si substrate indicating that the driving stress mainly originates from the zipping effect among islands during growth.