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François M. Peeters

Researcher at University of Antwerp

Publications -  12
Citations -  511

François M. Peeters is an academic researcher from University of Antwerp. The author has contributed to research in topics: Bilayer graphene & Quantum dot. The author has an hindex of 7, co-authored 12 publications receiving 425 citations.

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Commensurability Effects in Viscosity of Nanoconfined Water

TL;DR: The structure and dynamics of water confined between two parallel graphene layers are studied using equilibrium molecular dynamics simulations and it is found that the shear viscosity is not only greatly enhanced for subnanometer capillaries, but also exhibits large oscillations that originate from commensurability between the capillary size and the size of water molecules.
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Realization of a tunable artificial atom at a supercritically charged vacancy in graphene

TL;DR: In this article, a single-atom vacancy in graphene can stably host a local charge and that this charge can be gradually built up by applying voltage pulses with the tip of a scanning tunnelling microscope.
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Binding energies of positive and negative trions: From quantum wells to quantum dots

TL;DR: In this paper, the binding energies for positive and negative trions in a series of narrow GaAs quantum wells and in ''natural'' quantum dots defined by quantum well thickness fluctuations were compared.
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Enhancement of the Stability of Fluorine Atoms on Defective Graphene and at Graphene/Fluorographene Interface.

TL;DR: It is found that an isolated F atom diffuses easily on graphene, but those F atoms can be localized by inducing vacancies or absorbates in graphene and by creating graphene/fluorographene interfaces, which would strengthen the binding energy of F atoms on graphene and increase the diffusion energy barrier of F atom remarkably.
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Unusual dimensionality effects and surface charge density in 2D Mg(OH)2.

TL;DR: It is shown that a strong change transfer occurs from n-doped CVD-MoS2 sheets to Mg(OH)2, naturally depleting the semiconductor, pushing towards intrinsic doping limit and enhancing overall optical performance of 2D semiconductors.