F
Frank Bertram
Researcher at Otto-von-Guericke University Magdeburg
Publications - 184
Citations - 5730
Frank Bertram is an academic researcher from Otto-von-Guericke University Magdeburg. The author has contributed to research in topics: Cathodoluminescence & Metalorganic vapour phase epitaxy. The author has an hindex of 36, co-authored 180 publications receiving 5465 citations. Previous affiliations of Frank Bertram include Arizona State University.
Papers
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Journal ArticleDOI
Bound exciton and donor–acceptor pair recombinations in ZnO
Bruno K. Meyer,H. Alves,Detlev M. Hofmann,W. Kriegseis,D. Forster,Frank Bertram,Jürgen Christen,Axel Hoffmann,M. Straßburg,M. Dworzak,U. Haboeck,Anna V. Rodina +11 more
TL;DR: In this paper, the optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photoluminescence (PL) and spatially resolved cathodoluminecence (CL) measurements.
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Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy
Th. Gruber,C. Kirchner,R. Kling,F. Reuss,Andreas Waag,Frank Bertram,D. Forster,Jürgen Christen,Matthias Schreck +8 more
TL;DR: In this article, structural and optical properties of Zn1−xCdxO layers grown by metalorganic vapor phase epitaxy were analyzed, and a narrowing of the fundamental band gap of up to 300 meV was observed.
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MOVPE growth of GaN on Si(1 1 1) substrates
Armin Dadgar,M. Poschenrieder,Jürgen Bläsing,O. Contreras,Frank Bertram,T. Riemann,A. Reiher,Mike Kunze,I. Daumiller,A. Krtschil,A. Diez,A. Kaluza,A. Modlich,Markus Kamp,Jürgen Christen,Fernando Ponce,Erhard Kohn,Alois Krost +17 more
TL;DR: In this paper, a reduction in dislocation density from 10 10 to 10 9 cm -2 is observed for LT-AIN interlayers which can be further improved using monolayer thick Si x N y in situ masking and subsequent lateral overgrowth.
Journal ArticleDOI
Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy
Frank Bertram,T. Riemann,Juergen Christen,A. Kaschner,Ary A. Hoffmann,Christian Thomsen,Kazumasa Hiramatsu,T. Shibata,Nobuhiko Sawaki +8 more
TL;DR: In this article, cathodoluminescence (CL) microscopy and micro-Raman spectroscopy were used to characterize Epitaxial lateral overgrowth GaN structures oriented along the 〈112_0〉 direction.
MOVPE growth of GaNon Si(1 1 1) substrates
Armin Dadgar,M. Poschenrieder,O. Contreras,Frank Bertram,T. Riemann,A. Reiher,Mike Kunze,I. Daumiller,A. Krtschil,A. Diez,A. Kaluza,A. Modlich,Markus Kamp,J. Christen,E. Kohn,Alois Krost +15 more
TL;DR: In this paper, a reduction in dislocation density from 10 10 to 10 9 cm � 2 is observed for LT-AlNinterlayers which can be further improved using monolayer thick SixNy in situ masking and subsequent lateral overgrowth.