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Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy

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TLDR
In this article, structural and optical properties of Zn1−xCdxO layers grown by metalorganic vapor phase epitaxy were analyzed, and a narrowing of the fundamental band gap of up to 300 meV was observed.
Abstract
The development of ZnO-based semiconductor devices requires band gap engineering. Ternary Zn1−xCdxO allows reduction of the band gap relative to ZnO, which would be necessary for devices emitting visible light. We have analyzed the structural and optical properties of Zn1−xCdxO layers grown by metalorganic vapor-phase epitaxy. A narrowing of the fundamental band gap of up to 300 meV has been observed, while introducing a lattice mismatch of only 0.5% with respect to binary ZnO. Photoluminescence, high-resolution x-ray diffraction, and spatially resolved cathodoluminescence measurements revealed a lateral distribution of two different cadmium concentrations within the Zn1−xCdxO layers.

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A comprehensive review of zno materials and devices

TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
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Fundamentals of zinc oxide as a semiconductor

TL;DR: In this article, the status of zinc oxide as a semiconductor is discussed and the role of impurities and defects in the electrical conductivity of ZnO is discussed, as well as the possible causes of unintentional n-type conductivity.
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ZnO : From basics towards applications

TL;DR: In this article, the authors review the fundamental properties of ZnO and of ZNO-based nanostructures, doping as well as present and future applications with emphasis on the electronic and optical properties including stimulated emission.
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ZnO: Material, Physics and Applications

TL;DR: This work critically review aspects of the material growth, fundamental properties of ZnO and ZNO-based nanostructures and doping as well as present and future applications with emphasis on the electronic and optical properties including stimulated emission.
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ZnMgO epilayers and ZnO–ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region

TL;DR: In this paper, the properties of ZnMgO epilayers and ZnO-ZnmgO quantum well structures grown by metalorganic vapor phase epitaxy were investigated.
References
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Journal ArticleDOI

Optically pumped lasing of ZnO at room temperature

TL;DR: In this paper, the authors reported the observation of optically pumped lasing in ZnO at room temperature using a plasma-enhanced molecular beam epitaxy on sapphire substrates.
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Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature

TL;DR: In this paper, room temperature free excition absorption and luminescence were observed in ZnO thin films grown on sapphire substrates by the laser molecular beam epitaxy technique.
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The exciton spectrum of zinc oxide

TL;DR: In this paper, the absorption and reflection spectra of ZnO crystals have been observed in the near ultraviolet at temperatures between 300° and 4.2°K, and the Kramers-Kronig relation has been used to analyze the reflectance data.
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Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films

TL;DR: In this paper, the structural and optical properties of II-VI oxide alloys, MgxZn1−xO and CdyZn 1−yO, grown by pulsed-laser deposition, were described.
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