M. Straßburg

TL;DR: In this paper, the optical properties of excitonic recombinations in bulk, n-type ZnO are investigated by photoluminescence (PL) and spatially resolved cathodoluminecence (CL) measurements.

Abstract: Local vibrational modes in the region of the acoustic and optical phonons are reported for Mg-doped GaN grown by molecular beam epitaxy. The modes, studied by Raman spectroscopy, appear in addition to the known modes in the high-energy region around 2200 cm−1. We suggest disorder-activated scattering and scattering from Mg-related lattice vibrations to be the origin of the low-energy modes. Our assignment is supported by calculations based on a modified valence-force model of Kane. Temperature-dependent measurements between 4 and 300 K exclude an electronic Raman-scattering mechanism. We also report a new line at 2129 cm−1 and discuss the origin of all five observed high-energy modes.

TL;DR: In this paper, the growth of GaN on silicon by low-pressure metal organic chemical vapor deposition was investigated, and single crystalline GaN films were obtained by introducing a thin low-temperature GaN buffer layer grown on the AlAs nucleation layer.

TL;DR: In this article, structural and optical properties of submonolayer CdSe/ZnSe superlattices grown with varying thickness of the ZnSe spacer layer are studied.

TL;DR: Ruthenium doping has been successfully applied for the growth of semi-insulating (s.i.) InP layers as discussed by the authors, which shows no interdiffusion with p-type dopants.