G
G.K. Ho
Researcher at Georgia Institute of Technology
Publications - 33
Citations - 2022
G.K. Ho is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Resonator & Q factor. The author has an hindex of 24, co-authored 33 publications receiving 1939 citations. Previous affiliations of G.K. Ho include Georgia Tech Research Institute & Analog Devices.
Papers
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Thin-film piezoelectric-on-silicon resonators for high-frequency reference oscillator applications
TL;DR: This paper studies the application of lateral bulk acoustic thin-film piezoelectric-on-substrate (TPoS) resonators in high-frequency reference oscillators, designed and fabricated in 2 classes--high-order and coupled-array and the performance characteristics of the oscillators are measured and discussed.
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Piezoelectric-on-Silicon Lateral Bulk Acoustic Wave Micromechanical Resonators
TL;DR: In this article, the design, fabrication, and characterization of piezoelectrically-transduced micromechanical single-crystal-silicon resonators operating in their lateral bulk acoustic modes to address the need for high-Q microelectronic-integrable frequency-selective components is presented.
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High-Q single crystal silicon HARPSS capacitive beam resonators with self-aligned sub-100-nm transduction gaps
TL;DR: In this article, the HARPSS process was used to fabricate high quality factor (Q) single crystal silicon (SCS) in-plane capacitive beam resonators with sub-100 nm to submicron transduction gaps.
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Electronically Temperature Compensated Silicon Bulk Acoustic Resonator Reference Oscillators
TL;DR: The paper describes the design and implementation of an electronically temperature compensated reference oscillator based on capacitive silicon micromechanical resonators that exhibits a frequency drift of 39 ppm over 100degC as compared to an uncompensated frequency drift over the same range.
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Low-Impedance VHF and UHF Capacitive Silicon Bulk Acoustic Wave Resonators—Part I: Concept and Fabrication
TL;DR: In this paper, a high-performance high-frequency single-crystal silicon (SCS) capacitive resonator is presented, which operates in their horizontal width extensional modes with quality factors in the range of 10000-100000.