G
G. Sun
Researcher at University of Florida
Publications - 8
Citations - 979
G. Sun is an academic researcher from University of Florida. The author has contributed to research in topics: Electron mobility & Strained silicon. The author has an hindex of 6, co-authored 8 publications receiving 948 citations.
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Journal ArticleDOI
Uniaxial-process-induced strained-Si: extending the CMOS roadmap
TL;DR: In this article, a more complete data set of n-and p-channel MOSFET piezoresistance and strain-altered gate tunneling is presented along with new insight into the physical mechanisms responsible for hole mobility enhancement.
Proceedings ArticleDOI
Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs
TL;DR: For both n and pMOSFETs, the authors showed that valence band warping creates favorable in and out-of-plane conductivity effective masses resulting in significantly larger hole mobility enhancement at low strain and high vertical field.
Journal ArticleDOI
Hole mobility in silicon inversion layers: Stress and surface orientation
TL;DR: In this article, hole transport in the p-type metal-oxide-semiconductor field effect transistor (p-MOSFET) inversion layer under arbitrary stress, surface, and channel orientation is investigated by employing a six-band k∙p model and finite difference formalism.
Proceedings ArticleDOI
Future of Strained Si/Semiconductors in Nanoscale MOSFETs
Scott E. Thompson,S. Suthram,Y. Sun,G. Sun,Srivatsan Parthasarathy,Min Chu,Toshikazu Nishida +6 more
TL;DR: In this article, the maximum electron and hole mobility enhancement for uniaxial process-induced strained silicon is modeled and experimentally measured using a flexure based 4-point wafer bending jig.
Proceedings ArticleDOI
High Performance pMOSFETs Using Si/Si 1-x Ge x /Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node
S. Suthram,Prashant Majhi,G. Sun,Pankaj Kalra,H.R. Harris,K.J. Choi,Dawei Heh,J. Oh,D. Q. Kelly,Rino Choi,Byung Jin Cho,Muhammad Mustafa Hussain,Casey Smith,S. Banerjee,Wilman Tsai,Scott E. Thompson,H.-H. Tseng,R. Jammy +17 more
TL;DR: In this article, the authors demonstrate that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations.