R. Jammy

TL;DR: In this article, the current status of and challenges in gate stack research for planar CMOS devices and alternative device technologies are reviewed to provide insights for future research, but many challenges remain before alternative gate stacks can be introduced into mainstream technology.

TL;DR: In this paper, the evolution over time of leakage current in HfO 2 -based MIM capacitors under continuous or periodic constant voltage stress (CVS) was studied for a range of stress voltages and temperatures.

TL;DR: In this paper, rare earth (RE) doping of HfO2 has been shown to reduce leakage current by three orders of magnitude compared with pure O2 and ZrREO by stabilizing the higher permittivity tetragonal phase.

TL;DR: By combining electrical, physical, and transport/atomistic modeling results, the authors identifies critical conductive filament features controlling TiN/HfO 2 /TiN resistive memory operations.

TL;DR: In this paper, the authors report a method to acquire low operational currents from a hetero-structured ReRAM (AlOx/TiOx) by tuning tunnel oxide properties along with adopting 5 nm sized “Dash BE.