G
Giovanni A. Salvatore
Researcher at ETH Zurich
Publications - 90
Citations - 4343
Giovanni A. Salvatore is an academic researcher from ETH Zurich. The author has contributed to research in topics: Transistor & Thin-film transistor. The author has an hindex of 28, co-authored 90 publications receiving 3457 citations. Previous affiliations of Giovanni A. Salvatore include Dresden University of Technology & École Normale Supérieure.
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Journal ArticleDOI
Lab-on-Skin: A Review of Flexible and Stretchable Electronics for Wearable Health Monitoring
TL;DR: The term "lab-on-skin" is introduced to describe a set of electronic devices that have physical properties, such as thickness, thermal mass, elastic modulus, and water-vapor permeability, which resemble those of the skin, which provide accurate, non-invasive, long-term, and continuous health monitoring.
Journal ArticleDOI
Battery-free, stretchable optoelectronic systems for wireless optical characterization of the skin
Jeonghyun Kim,Jeonghyun Kim,Giovanni A. Salvatore,Giovanni A. Salvatore,Hitoshi Araki,Antonio Maria Chiarelli,Zhaoqian Xie,Zhaoqian Xie,Anthony Banks,Xing Sheng,Yuhao Liu,Jung Woo Lee,Jung Woo Lee,Kyung In Jang,Seung Yun Heo,Kyoungyeon Cho,Hongying Luo,Hongying Luo,Benjamin Zimmerman,Joonhee Kim,Lingqing Yan,Xue Feng,Sheng Xu,Monica Fabiani,Gabriele Gratton,Yonggang Huang,Ungyu Paik,John A. Rogers +27 more
TL;DR: The work reported here introduces active optoelectronic systems that function without batteries and in an entirely wireless mode, with examples in thin, stretchable platforms designed for multiwavelength optical characterization of the skin.
Journal ArticleDOI
Wafer-scale design of lightweight and transparent electronics that wraps around hairs
Giovanni A. Salvatore,Niko Munzenrieder,Thomas Kinkeldei,Luisa Petti,Christoph Zysset,Ivo Strebel,Lars Büthe,Gerhard Tröster +7 more
TL;DR: A wafer-scale process scheme to realize ultra flexible, lightweight and transparent electronics on top of a 1-μm thick parylene film that is released from the carrier substrate after the dissolution in water of a polyvinyl- alcohol layer is proposed.
Proceedings ArticleDOI
Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification
TL;DR: In this paper, the first complete experimental demonstration and investigation of subthreshold swing, SS, smaller than 60 mV/decade, at room temperature, due to internal voltage amplification in FETs with a Metal-Ferroelectric-Metal-Oxide gate stack was reported.
Journal ArticleDOI
Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate.
Giovanni A. Salvatore,Niko Munzenrieder,Clément Barraud,Luisa Petti,Christoph Zysset,Lars Büthe,Klaus Ensslin,Gerhard Tröster +7 more
TL;DR: A process scheme enabling the fabrication and transfer of few-layers MoS2 thin film transistors from a silicon template to any arbitrary organic or inorganic and flexible or rigid substrate or support is presented.