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Clément Barraud

Researcher at University of Paris

Publications -  42
Citations -  1549

Clément Barraud is an academic researcher from University of Paris. The author has contributed to research in topics: Graphene & Spintronics. The author has an hindex of 14, co-authored 37 publications receiving 1352 citations. Previous affiliations of Clément Barraud include Centre national de la recherche scientifique & Paris Diderot University.

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Unravelling the role of the interface for spin injection into organic semiconductors

TL;DR: In this paper, the metal/organic interface is found to be key for spin injection in organic semiconductors, and the authors investigated how to optimize the injection of spin into these materials.
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Fabrication and transfer of flexible few-layers MoS2 thin film transistors to any arbitrary substrate.

TL;DR: A process scheme enabling the fabrication and transfer of few-layers MoS2 thin film transistors from a silicon template to any arbitrary organic or inorganic and flexible or rigid substrate or support is presented.
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Magnetoresistance in magnetic tunnel junctions grown on flexible organic substrates

TL;DR: In this paper, the fabrication and spin dependent tunneling studies of magnetic tunnel junctions (MTJ) grown on flexible organic substrates were reported, and it was shown that after twisting and bending the MTJ on flexible substrates the TMR magnitude is maintained which indicates that spin-dependent tunneling properties are preserved.
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Are Al2O3 and MgO tunnel barriers suitable for spin injection in graphene

TL;DR: In this article, the structural impact of the growth on the structure of multilayer graphene and up to 4-layer flakes was analyzed by Raman spectroscopy, and it was shown that while single layer graphene offers the best spin transport properties, the better robustness of multi-layer graphene may ultimately make it a better choice for spintronics devices.
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Spinterface: Crafting spintronics at the molecular scale

TL;DR: In this paper, the spin-dependent hybridization at the FM metal/molecule interface can lead to induced spin polarization in the molecular orbitals thanks to spindependent broadening and energy shifting of the molecular levels.