G
Guy Beaucarne
Researcher at Katholieke Universiteit Leuven
Publications - 129
Citations - 4340
Guy Beaucarne is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Silicon & Thin film. The author has an hindex of 33, co-authored 127 publications receiving 4203 citations. Previous affiliations of Guy Beaucarne include IMEC & University of New South Wales.
Papers
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Journal ArticleDOI
Modifying the solar spectrum to enhance silicon solar cell efficiency—An overview of available materials
C. Strumpel,M. McCann,Guy Beaucarne,V. Arkhipov,Abdelilah Slaoui,Vladimir Svrcek,C. del Cañizo,I. Tobias +7 more
TL;DR: In this article, three ways in which the cell efficiency of silicon solar cells may be improved by better exploitation of the solar spectrum: down-conversion (cutting one high energy photon into two low energy photons), photoluminescence (shifting photons into wavelength regions better accepted by the solar cell), and up-converting (combining low-energy photons to one high-energy photon).
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Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
G. Agostinelli,Annelies Delabie,Petko Vitanov,Z. Alexieva,Harold Dekkers,S. De Wolf,Guy Beaucarne +6 more
TL;DR: In this paper, surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al 2 O 3 layers on p-type CZ silicon wafers.
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Back-contact solar cells : A review
TL;DR: Backcontact cells are divided into three main classes: back-junction (BJ), emitter wrap-through (EWT), and metallisation wrapthrough (MWT), each introduced as logical descendents from conventional solar cells as discussed by the authors.
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8% Efficient thin-film polycrystalline-silicon solar cells based on aluminum-induced crystallization and thermal CVD
TL;DR: In this article, different process steps were developed to enhance the efficiency of polycrystalline-silicon (pc-Si) solar cells on alumina substrates made by AIC in combination with thermal chemical vapor deposition (CVD).
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Stress-induced large-area lift-off of crystalline Si films
Frederic Dross,Jo Robbelein,B. Vandevelde,E. Van Kerschaver,Ivan Gordon,Guy Beaucarne,Jef Poortmans +6 more
TL;DR: In this article, a new implantation-free lift-off process is presented, where a layer with mismatched thermal expansion coefficient with respect to the substrate is deposited, and upon cooling, the differential contraction induces a large stress field which is released by the initiation and the propagation of a crack parallel to the surface.